MBR1070CT thru MBR10100CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
MBR1070CT
MBR1080CT
MBR1090CT
70
49
56
63
70
70
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
80
80
90
90
MBR10100CT 100
100
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=100oC
10
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
120
dv/dt
Voltage Rate Of Change (Rated VR)
IF=5A @TJ=25oC
Maximum Forward
Voltage (Note 1)
10000
V/us
0.85
0.75
0.95
0.85
IF=5A @TJ=125oC
IF=10A @TJ=25oC
IF=10A @TJ=125oC
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
15
IR
mA
@TJ=125oC
3.0
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
300
-55 to +150
-55 to +175
TJ
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications