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MBR0520L_NF065 PDF预览

MBR0520L_NF065

更新时间: 2024-11-18 14:53:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
3页 42K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 20V V(RRM), Silicon, LEAD FREE PACKAGE-2

MBR0520L_NF065 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.12
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.22 V
JESD-30 代码:R-PDSO-G2最大非重复峰值正向电流:5.5 A
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:20 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

MBR0520L_NF065 数据手册

 浏览型号MBR0520L_NF065的Datasheet PDF文件第2页浏览型号MBR0520L_NF065的Datasheet PDF文件第3页 
MBR0520L  
Features  
0.5 Ampere, low forward voltage, less then 385mV  
400 milliwatt Power Dissipation package  
Compact surface mount package with the same  
footprint as mini-melf  
SOD123  
Color Band Denotes Cathode  
Mark: B2  
Schottky Rectifier  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Non Repetitive Peak Forward Current  
20  
500  
5.5  
V
mA  
A
(Surge applied at rated load conditions half wave, single phase, 60 Hz)  
Tstg  
Storage Temperature Range  
-65 to +150  
-65 to +125  
C
C
°
°
Tj max  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
Thermal Resistance Junction to Ambient*  
Thermal Resistance Junction to Lead  
340  
150  
RθJA  
RθJL  
C/W  
°
°C/W  
*FR-4 or FR-5 = 3.5 x 1.5 inches using minimum recommended Land Pads.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VF  
Forward Voltage  
Reverse Current  
@ IF = 100 mA,  
IF = 100 mA, TA = 100 °C  
IF = 500 mA,  
300  
220  
385  
330  
mV  
mV  
mV  
mV  
I = 500 mA, T = 100 C  
°
F
A
IR  
@ VR = 10 V,  
VR = 10 V, TA = 100 °C  
VR = 20 V,  
75  
5.0  
250  
8.0  
µA  
mA  
µA  
mA  
V = 20 V, T = 100 C  
°
R
A
2001 Fairchild Semiconductor Corporation  
MBR0520L, Rev. B  

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