Datasheet > MBR0520W

MBR0520W

更新时间： 2024-11-02 14:55:15

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	153K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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MBR0520W 数据手册

MBR0520W

PINNING

Surface Mount Schottky Barrier Diode

DESCRIPTION

Cathode

Anode

Features

• Very low forward voltage

• High current capability

Top View

Simplified outline SOD-123FL and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

0.5

Average Rectified Forward Current

Peak Forward Surge Current (8.3 ms Single Half Sine-wave)

Junction Temperature Range

Storage Temperature Range

I_F(AV)

I_FSM

T_j

- 65 to + 150

℃

T_stg

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

340

150

Unit

℃/W

Thermal Resistance Junction to Ambient ¹⁾

Thermal Resistance Junction to Lead ¹⁾

R_θJL

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Characteristics at T_a= 25℃

Parameter

Reverse Breakdown Voltage

Symbol

V_(BR)R

Min.

Max.

Unit

at I_R= 150 μA

Forward Voltage

at I_F= 0.1 A

at I_F= 0.5 A

at I_F= 0.1 A, T_j= 100℃

at I_F= 0.5 A, T_j= 100℃

0.375

0.44

0.26

0.36

V_F

Reverse Current

at V_R= 10 V

at V_R= 20 V

at V_R= 10 V, T_j= 100℃

at V_R= 20 V, T_j= 100℃

µA

150

I_R

Total Capacitance

at V_R= 5 V (test signal range 100 KHz to 1 MHz)

C_tot

110

1 / 3

Dated: 07/04/2022 Rev: 05

12 3

中文翻译

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