Datasheet > MBM29F200TC-70PFTN

MBM29F200TC-70PFTN

更新时间： 2024-11-03 22:58:07

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
48页	490K
描述
2M (256K X 8/128K X 16) BIT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBM29F200TC-70PFTN 数据手册

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第2页

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第3页

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第4页

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第5页

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第6页

浏览型号MBM29F200TC-70PFTN的Datasheet PDF文件第7页

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20867-3E

FLASH MEMORY

CMOS

2M (256K × 8/128K × 16) BIT

MBM29F200TC^-55/-70/-90/MBM29F200BC^-55/-70/-90

■ FEATURES

• Single 5.0 V read, write, and erase

Minimizes system level power requirements

• Compatible with JEDEC-standard commands

Uses same software commands as E²PROMs

• Compatible with JEDEC-standard world-wide pinouts

48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

44-pin SOP (Package suffix: PF)

• Minimum 100,000 write/erase cycles

• High performance

55 ns maximum access time

• Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

• Boot Code Sector Architecture

T = Top sector

B = Bottom sector

• Embedded Erase^TMAlgorithms

Automatically pre-programs and erases the chip or any sector

• Embedded Program^TMAlgorithms

Automatically writes and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

• Low Vcc write inhibit ≤ 3.2 V

• Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

• Hardware RESET pin

Resets internal state machine to the read mode

• Sector protection

Hardware method disables any combination of sectors from write or erase operations

• Temporary sector unprotection

Hardware method temporarily enables any combination of sectors from write on erase operations.

Embedded Erase^TMand Embedded Program^TMare trademarks of Advanced Micro Devices, Inc.

12 3 4 5 6 7...48

中文翻译

下载PDF

与MBM29F200TC-70PFTN相关器件

型号	品牌	获取价格	描述	数据表
MBM29F200TC-70PFTN-E1	SPANSION	获取价格	Flash, 128KX16, 70ns, PDSO48, PLASTIC, TSOP1-48
MBM29F200TC-70PFTR	FUJITSU	获取价格	2M (256K X 8/128K X 16) BIT
MBM29F200TC-70PFTR-E1	SPANSION	获取价格	Flash, 128KX16, 70ns, PDSO48, REVERSE, PLASTIC, TSOP1-48
MBM29F200TC-90	FUJITSU	获取价格	2M (256K X 8/128K X 16) BIT
MBM29F200TC-90PF	FUJITSU	获取价格	2M (256K X 8/128K X 16) BIT
MBM29F200TC-90PF-E1	SPANSION	获取价格	Flash, 128KX16, 90ns, PDSO44, PLASTIC, SOP-44
MBM29F200TC-90PFTN	FUJITSU	获取价格	2M (256K X 8/128K X 16) BIT
MBM29F200TC-90PFTN-E1	SPANSION	获取价格	Flash, 128KX16, 90ns, PDSO48, PLASTIC, TSOP1-48
MBM29F200TC-90PFTR	FUJITSU	获取价格	2M (256K X 8/128K X 16) BIT
MBM29F400BC-55	FUJITSU	获取价格	4M (512K X 8/256K X 16) BIT