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MBM29DL164TD12PFTN PDF预览

MBM29DL164TD12PFTN

更新时间: 2024-11-28 04:41:55
品牌 Logo 应用领域
富士通 - FUJITSU 可编程只读存储器光电二极管
页数 文件大小 规格书
76页 1146K
描述
1MX16 FLASH 3V PROM, 120ns, PDSO48, PLASTIC, TSOP1-48

MBM29DL164TD12PFTN 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20874-4E  
FLASH MEMORY  
CMOS  
16M (2M × 8/1M × 16) BIT Dual Operation  
MBM29DL16XTD/BD-70/90/12  
FEATURES  
• 0.33 µm Process Technology  
• Simultaneous Read/Write operations (dual bank)  
Multiple devices available with different bank sizes (Refer to Table 1)  
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank  
Zero latency between read and write operations  
Read-while-erase  
Read-while-program  
• Single 3.0 V read, program, and erase  
Minimizes system level power requirements  
(Continued)  
PRODUCT LINE UP  
Part No.  
VCC = 3.3 V  
MBM29DL16XTD/MBM29DL16XBD  
+0.3 V  
–0.3 V  
70  
Ordering Part No.  
+0.6 V  
–0.3 V  
VCC = 3.0 V  
70  
70  
30  
90  
90  
90  
35  
12  
120  
120  
50  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
PACKAGES  
48-pin plastic TSOP (I)  
48-pin plastic TSOP (I)  
48-pin plastic FBGA  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  
(BGA-48P-M13)  
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.  

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