是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | 风险等级: | 5.88 |
最长访问时间: | 120 ns | 备用内存宽度: | 8 |
启动块: | TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PDSO-G48 | JESD-609代码: | e0 |
内存密度: | 16777216 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 湿度敏感等级: | 3 |
部门数/规模: | 8,31 | 端子数量: | 48 |
字数: | 1048576 words | 字数代码: | 1000000 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSSOP | 封装等效代码: | TSSOP48,.8,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
并行/串行: | PARALLEL | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
反向引出线: | YES | 部门规模: | 8K,64K |
最大待机电流: | 0.000005 A | 子类别: | Flash Memories |
最大压摆率: | 0.05 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
切换位: | YES | 类型: | NOR TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MBM29DL164TD-70PBT | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TD-70PFTN | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TD-70PFTR | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TD-90PBT | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TD-90PFTN | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TD-90PFTR | SPANSION |
获取价格 |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TE | FUJITSU |
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16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TE-12 | FUJITSU |
获取价格 |
16M (2M X 8/1M X 16) BIT Dual Operation | |
MBM29DL164TE-12PBT | SPANSION |
获取价格 |
Flash, 1MX16, 12ns, PBGA48, PLASTIC, FBGA-48 | |
MBM29DL164TE-12PBT-E1 | SPANSION |
获取价格 |
Flash, 1MX16, 12ns, PBGA48, PLASTIC, FBGA-48 |