Datasheet > MBL800E33C

MBL800E33C

更新时间： 2024-10-23 20:56:15

品牌	Logo	应用领域
日立 - HITACHI		局域网栅晶体管
页数	文件大小	规格书
6页	555K
描述
Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, MODULE-9

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MBL800E33C 数据手册

Spec.No.IGBT-SP-06011 R1 (P1/5)

IGBT MODULE

MBL800E33C

Silicon N-channel IGBT

OUTLINE DRAWING

Unit in mm

FEATURES

∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles)

diode – ultra soft fast recovery diode(USFD).

∗ low noise due to built-in free-wheeling

∗ High speed,low loss IGBT module.

CIRCUIT DIAGRAM

∗ Low driving power due to low input

capacitance MOS gate.

∗ High reliability,high durability module.

∗ lsolated heat sink(terminal to base).

Weight : 1300(g)

ABSOLUTE MAXIMUM RATINGS (Tc=25^o

C )

Item

Symbol

Unit

MBL800E33C

3,300

Collector Emitter Voltage

Gate Emitter Voltage

V_CES

V_GES

I_C

±20

800

1,600

800

1ms

Collector Current

I_Cp

I_F

I_FM

T_j

T_stg

V_ISO

Forward Current

^oC

1ms

1,600

Junction Temperature

Storage Temperature

lsolation Voltage

-40 ~ +125

6,000(AC 1 minute)

V_RMS

Terminals (M4/M8)

Mounting (M6)

2/10

(1)

(2)

Screw Torque

N·m

Notes: (1) Recommended Value 1.8±0.2N·m 9±1N·m (2) Recommended Value 5.5±0.5N·m

CHARECTERISTICS

1) IGBT + FWD

Item

Symbol Unit

Min. Typ. Max.

Test Conditions

12 V_CE=3,300V, V_GE=0V, T =25

60 V_CE=3,300V, V_GE=0V,T =125

500 V_GE

Collector Emitter Cut-Off Current

Gate Emitter Leakage Current

Collector Emitter Saturation Voltage

I _CES

I_GES

20V, V_CE=0V, T =25

4.1

4.8

5.5

100

2.0

2.9

1.7

3.5

1.6

1.1

2.2

2.3

5.0 I_C=800A, V_GE=15V, Tj=25

5.3 I_C=800A, V_GE=15V ,T =125

6.5 V_CE=5V, Ic=800mA, Tj=25

V_CE(sat)

Gate Emitter Threshold Voltage

Input Capacitance

V_GE(TO)

C_ies

4.5

V_CE=10V, V_GE=0V,f=100KHz, Tj=25

Rise Time

Turn On Time

Fall Time

t_r

3.2 V_CC=1,650V

Ic=800A

L=120nH

t_on

t_f

3.8

3.2

5.6

2.1

1.6

Switching Times

µs

R_G=4.7Ω (3)

V_GE=±15V

T =125^oC

Turn Off Time

Turn On Loss

t_off

E_on(10%)

E_off(10%)

J/P

Turn Off Loss

2.8 -Ic=800A, V_GE=0V, T =25

2.75 -Ic=800A, V_GE=0V, T =125

Peak Forward Voltage Drop

V_FM

IGBT

Thermal Impedance

FWD

Rth(j-c)

0.013

K/W

Junction to case

0.026

2) DIODE

Item

Symbol Unit

Min. Typ. Max.

Test Conditions

12 V_AK=3,300V

20 V_AK=3,300V,Tc=125

Collector Emitter Cut-Off Current

I _AKS

I_F=800A

2.4

2.7

3.0 Tj=25

At Main Terminal

Peak Forward Voltage Drop

V_F

3.2 Tj=125

(Terminal resistance:0.5mΩ typical)

Reverse Recovery Time

Reverse Recovery Loss

Thermal Impedance

I_F=800A, V_CC=1,650V (4)

trr

E_rr(10%)

Rth(j-c)

0.8

1.0

1.4

µs

L=120nH, T =125^oC

J/P

K/W

0.026 Junction to case

Notes: (3) R_Gvalue is the test condition's value for decision of the switching times,

not recommended value. Please, Determine the suitable R_Gvalue after the

measurement of switching waveforms(overshoot voltage,etc.)with appliance mounted.

(4)Counter arm IGBT V_GE15V

12 3 4 5 6

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