Spec.No.IGBT-SP-06011 R1 (P1/5)
IGBT MODULE
MBL800E33C
Silicon N-channel IGBT
OUTLINE DRAWING
Unit in mm
FEATURES
∗ High thermal fatigue durability.(delta Tc=70 ,N>30,000cycles)
diode – ultra soft fast recovery diode(USFD).
∗ low noise due to built-in free-wheeling
∗ High speed,low loss IGBT module.
CIRCUIT DIAGRAM
∗ Low driving power due to low input
capacitance MOS gate.
∗ High reliability,high durability module.
∗ lsolated heat sink(terminal to base).
Weight : 1300(g)
ABSOLUTE MAXIMUM RATINGS (Tc=25o
C )
Item
Symbol
Unit
V
V
MBL800E33C
3,300
Collector Emitter Voltage
Gate Emitter Voltage
VCES
VGES
IC
±20
800
1,600
800
DC
1ms
DC
Collector Current
A
ICp
IF
IFM
Tj
Tstg
VISO
-
Forward Current
A
oC
oC
1ms
1,600
Junction Temperature
Storage Temperature
lsolation Voltage
-40 ~ +125
-40 ~ +125
6,000(AC 1 minute)
VRMS
Terminals (M4/M8)
Mounting (M6)
2/10
6
(1)
(2)
Screw Torque
N·m
-
Notes: (1) Recommended Value 1.8±0.2N·m 9±1N·m (2) Recommended Value 5.5±0.5N·m
CHARECTERISTICS
1) IGBT + FWD
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
-
-
-
-
12 VCE=3,300V, VGE=0V, T =25
60 VCE=3,300V, VGE=0V,T =125
500 VGE
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
I CES
IGES
mA
nA
V
20
-
=
20V, VCE=0V, T =25
-
-
4.1
4.8
5.5
100
2.0
2.9
1.7
3.5
1.6
1.1
2.2
2.3
-
5.0 IC=800A, VGE=15V, Tj=25
5.3 IC=800A, VGE=15V ,T =125
6.5 VCE=5V, Ic=800mA, Tj=25
VCE(sat)
Gate Emitter Threshold Voltage
Input Capacitance
VGE(TO)
Cies
V
nF
4.5
-
-
-
-
-
-
-
-
-
VCE=10V, VGE=0V,f=100KHz, Tj=25
Rise Time
Turn On Time
Fall Time
tr
3.2 VCC=1,650V
Ic=800A
L=120nH
ton
tf
3.8
3.2
5.6
2.1
1.6
Switching Times
µs
RG=4.7Ω (3)
VGE=±15V
T =125oC
Turn Off Time
Turn On Loss
toff
Eon(10%)
Eoff(10%)
J/P
J/P
Turn Off Loss
2.8 -Ic=800A, VGE=0V, T =25
2.75 -Ic=800A, VGE=0V, T =125
Peak Forward Voltage Drop
VFM
V
-
-
-
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
0.013
K/W
Junction to case
0.026
-
2) DIODE
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
-
-
-
12 VAK=3,300V
20 VAK=3,300V,Tc=125
Collector Emitter Cut-Off Current
I AKS
mA
5
IF =800A
-
-
2.4
2.7
3.0 Tj=25
At Main Terminal
Peak Forward Voltage Drop
VF
V
3.2 Tj=125
(Terminal resistance:0.5mΩ typical)
Reverse Recovery Time
Reverse Recovery Loss
Thermal Impedance
IF =800A, VCC=1,650V (4)
trr
Err(10%)
Rth(j-c)
-
-
-
0.8
1.0
-
1.4
1.4
µs
L=120nH, T =125oC
J/P
K/W
0.026 Junction to case
Notes: (3) RG value is the test condition's value for decision of the switching times,
not recommended value. Please, Determine the suitable RG value after the
measurement of switching waveforms(overshoot voltage,etc.)with appliance mounted.
(4)Counter arm IGBT VGE 15V
=