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MBB50A6 PDF预览

MBB50A6

更新时间: 2024-10-17 20:15:11
品牌 Logo 应用领域
瑞萨 - RENESAS 双极性晶体管
页数 文件大小 规格书
1页 77K
描述
TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,600V V(BR)CES,50A I(C)

MBB50A6 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):50 A
集电极-发射极最大电压:600 V门极-发射极最大电压:20 V
元件数量:1子类别:Insulated Gate BIP Transistors
VCEsat-Max:3 VBase Number Matches:1

MBB50A6 数据手册

  

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