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MB6SE3 PDF预览

MB6SE3

更新时间: 2024-11-04 14:38:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 107K
描述
DIODE 0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA, LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN, Bridge Rectifier Diode

MB6SE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-269AA
包装说明:LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN针数:4
Reach Compliance Code:unknown风险等级:5.57
Is Samacsys:NBase Number Matches:1

MB6SE3 数据手册

 浏览型号MB6SE3的Datasheet PDF文件第2页浏览型号MB6SE3的Datasheet PDF文件第3页浏览型号MB6SE3的Datasheet PDF文件第4页 
MB2S, MB4S & MB6S  
Vishay General Semiconductor  
Miniature Glass Passivated Single-Phase  
Surface Mount Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
~
• Saves space on printed circuit boards  
• Ideal for automated placement  
• High surge current capability  
~
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 250 °C  
~
• Solder dip 260 °C, 40 s  
~
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-269AA (MBS)  
TYPICAL APPLICATIONS  
General purpose use in ac-to-dc bridge full wave  
rectification for power supply, lighting ballaster, Battery  
charger, home appliances, office equipment, and  
telecommunication applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
0.5 A  
VRRM  
IFSM  
IR  
200 V, 400 V, 600 V  
35 A  
5 µA  
MECHANICAL DATA  
Case: TO-269AA (MBS)  
VF  
1.0 V  
150 °C  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked on body  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
MB2S  
MB4S  
4
MB6S  
6
UNIT  
Device marking code  
2
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average  
forward output rectified  
current (Fig. 1)  
on glass-epoxy P.C.B.  
on aluminum substrate  
0.5 (1)  
0.8 (2)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
35  
A
Rating for fusing (t < 8.3 ms)  
I2t  
5.0  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes:  
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads  
(2) On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20 x 20 mm) mounted on 0.05 x 0.05" (1.3 x 1.3 mm) solder pad  
Document Number: 88661  
Revision: 01-Feb-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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