Datasheet > MB10H100

MB10H100

更新时间： 2024-11-06 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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MB10H100 数据手册

MB10H100, MF10H100

Vishay General Semiconductor

www.vishay.com

High Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

D²PAK (TO-263AB)

ITO-220AC

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• Low leakage current

Available

• High forward surge capability

• High frequency operation

MF10H100

MB10H100

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for D²PAK (TO-263AB) package)

PIN 1

PIN 2

HEATSINK

PIN 2

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for ITO-220AC package)

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

V_F

10 A

100 V

250 A

0.64 V

4.5 μA

175 °C

MECHANICAL DATA

Case: ITO-220AC, D²PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

I_R

T_Jmax.

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Package

ITO-220AC, D²PAK (TO-263AB)

Single

Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101

qualified

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RWM

V_DC

MB10H100 MF10H100

UNIT

Maximum repetitive peak reverse voltage

100

Working peak reverse voltage

Maximum DC blocking voltage

100

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load

Peak repetitive reverse current at t_p= 2.0 μs, 1 kHz

Voltage rate of change (rated V_R)

I_F(AV)

I_FSM

250

I_RRM

0.5

dV/dt

T_J, T_STG

V_AC

10 000

-65 to +175

1500

V/μs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min

Revision: 24-Oct-2023

Document Number: 87727

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与MB10H100相关器件

型号	品牌	获取价格	描述	数据表
MB10H100CT	VISHAY	获取价格	Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved H
MB10M	HY	获取价格	GLASS PASSIVATED BRIDGE RECTIFIERS
MB10M	KINGTRONICS	获取价格	BRIDGE RECTIFIER
MB10M	DACHANG	获取价格	Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 1000 V Forward Current 0.8A
MB10M	BL Galaxy Electrical	获取价格	SILICON BRIDGE RECTIFIERS
MB10M	PFS	获取价格	Miniature Glass Passivated Single-Phase Bridge Rectifiers
MB10M	LUNSURE	获取价格	0.5Amp single phase glass passivated bridge retifier 50to1000 volts
MB10M	ASEMI	获取价格	GLASS PASSIVATED MINIATURE BRIDGE RECTIFIERS
MB10M	MCC	获取价格	0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
MB10M	TAITRON	获取价格	0.5A Glass Passivated Bridge Rectifier

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