Datasheet > MB10H100CT

MB10H100CT

更新时间： 2024-11-06 14:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	92K
描述
Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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MB10H100CT 数据手册

MB10H100CT, MF10H100CT

www.vishay.com

Vishay General Semiconductor

Dual Common Cathode High Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Power pack

ITO-220AB

D²PAK (TO-263AB)

• Guardring for overvoltage protection

• Low power loss, high efficiency

• Low forward voltage drop

• Low leakage current

Available

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for D²PAK (TO-263AB) package)

MF10H100CT

MB10H100CT

PIN 1

PIN 2

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for ITO-220AB package)

PIN 3

PIN 2

HEATSINK

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, freewheeling diodes, DC/DC converters,

and polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

V_RRM

100 V

150 A

0.61 V

3.5 μA

175 °C

MECHANICAL DATA

I_FSM

Case: ITO-220AB, D²PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

V_F

I_R

Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

T_Jmax.

Package

ITO-220AB, D²PAK (TO-263AB)

Base P/NHM3 - RoHS-compliant, halogen-free, AEC-Q101

qualified

Circuit configuration

Common cathode

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

MB10H100CT

100

MF10H100CT

UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RWM

V_DC

100

Maximum DC blocking voltage

total device

Maximum average forward rectified current at T_C= 105 °C

per diode

I_F(AV)

I_FSM

5.0

Peak forward surge current 8.3 ms single half sine-wave superimposed on

rated load per diode

150

0.5

Peak repetitive reverse current per diode at t_p= 2.0 μs, 1 kHz

Voltage rate of change (rated V_R)

I_RRM

dV/dt

T_J, T_STG

V_AC

10 000

-65 to +175

1500

V/μs

°C

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Revision: 24-Oct-2023

Document Number: 87728

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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