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MASMBG58AE3 PDF预览

MASMBG58AE3

更新时间: 2024-10-30 13:35:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 563K
描述
Trans Voltage Suppressor Diode, 600W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MASMBG58AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-215AA
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.36
Is Samacsys:N最大击穿电压:71.2 V
最小击穿电压:64.4 V击穿电压标称值:67.8 V
最大钳位电压:93.6 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-215AAJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:58 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MASMBG58AE3 数据手册

 浏览型号MASMBG58AE3的Datasheet PDF文件第2页浏览型号MASMBG58AE3的Datasheet PDF文件第3页浏览型号MASMBG58AE3的Datasheet PDF文件第4页浏览型号MASMBG58AE3的Datasheet PDF文件第5页浏览型号MASMBG58AE3的Datasheet PDF文件第6页浏览型号MASMBG58AE3的Datasheet PDF文件第7页 

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