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MAP6KE56ATRE3

更新时间： 2024-12-01 21:22:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 320K
描述
Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

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中文翻译

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MAP6KE56ATRE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.5其他特性：HIGH RELIABILITY
最大击穿电压：58.8 V最小击穿电压：53.2 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.47 W
认证状态：Not Qualified最大重复峰值反向电压：47.8 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MAP6KE56ATRE3 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 5.8 to 171 V standoff voltages (VWM)  
600W Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MP6KE6.8A thru MP6KE200CA, e3  
FEATURES  
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
T-18  
.
.
.
.
.
Economical TVS series for thru-hole mounting  
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MP6KE6.8A to MP6KE130A or CA  
Class 2: MP6KE6.8A to MP6KE68A or CA  
Class 3: MP6KE6.8A to MP6KE36A or CA  
Class 4: MP6KE6.8A to MP6KE18A or CA  
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MP6KE6.8A to MP6KE43A or CA  
Class 2: MP6KE6.8A to MP6KE22A or CA  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)  
with impulse repetition rate (duty factor) of 0.01 % or less  
.
.
.
tclamping (0 V to V(BR) min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Thermal Resistance: 25 °C/W at 3/8 inch (10 mm) lead length from body, or 85 C/W junction  
to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1  
mm, length 25 mm  
°
.
Steady-State Power: 5 watts @ TL=25 C 3/8 inch (10 mm) from body, or 1.47 W when  
mounted on FR4 PC board described for thermal resistance  
°
.
.
Forward Voltage at 25 C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine  
wave (unidirectional only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01007 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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与MAP6KE56ATRE3相关器件

型号 品牌 获取价格 描述 数据表
MAP6KE56C MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE56CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE56CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE56CATRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 47.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE56CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE56CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MAP6KE56CTR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MAP6KE56E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Unidirectional, 1 Element, Silicon, RO
MAP6KE56TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE6.8AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, ROH

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