是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.48 | 最大击穿电压: | 65.1 V |
最小击穿电压: | 58.9 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 53 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MAP6KE62ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Unidirectional, 1 Element, Silicon, ROHS | |
MAP6KE62CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
MAP6KE62CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
MAP6KE62CATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 53V V(RWM), Bidirectional, 1 Element, Silicon, ROHS | |
MAP6KE62CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 50.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MAP6KE62CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 50.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MAP6KE62CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 50.2V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MAP6KE62E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 50.2V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MAP6KE62TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 50.2V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MAP6KE68 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 55.1V V(RWM), Unidirectional, 1 Element, Silicon, PL |