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MAP6KE56CTR

更新时间： 2024-12-01 18:59:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 272K
描述
Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, T-18, 2 PIN

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MAP6KE56CTR 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete包装说明：O-PALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84Is Samacsys：N
最大击穿电压：61.6 V最小击穿电压：50.4 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified参考标准：MIL-19500
最大重复峰值反向电压：45.4 V表面贴装：NO
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MAP6KE56CTR 数据手册

 浏览型号MAP6KE56CTR的Datasheet PDF文件第2页浏览型号MAP6KE56CTR的Datasheet PDF文件第3页浏览型号MAP6KE56CTR的Datasheet PDF文件第4页 
P6KE6.8 thru 200CA, e3  
600 Watt TRANSIENT VOLTAGE  
SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This P6KE series is an economical 600 W Transient Voltage Suppressor (TVS)  
for protecting voltage-sensitive components from destruction or degradation. It  
is available in both unidirectional and bi-directional configurations as well as  
RoHS Compliant (annealed matte-Tin finish) with an e3 suffix added to the part  
number. The response time of their clamping action is virtually instantaneous.  
As a result, they may also be used effectively for protection from ESD or EFT  
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments  
and induced RF. They can also be used for protecting other sensitive  
components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
T-18  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Available in both unidirectional and bidirectional  
(add C or CA suffix to part number for bidirectional)  
•
•
•
Selections for 6.8 to 200 volts breakdown (VBR  
Economical TVS series for thru-hole mounting  
)
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
•
Protection from switching transients & induced RF  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
•
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
Class 1: P6KE6.8 to P6KE130A or CA  
Class 2: P6KE6.8 to P6KE68A or CA  
Class 3: P6KE6.8 to P6KE36A or CA  
Class 4: P6KE6.8 to P6KE18A or CA  
Surface mount equivalents available as SMBJP6KE6.8  
to SMBJP6KE200CA or SMBJ5.0 to SMBJ170CA  
(consult factory for other surface mount options)  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
•
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
Class 1: P6KE6.8 to P6KE43A or CA  
Class 2: P6KE6.8 to P6KE22A or CA  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
• Peak Pulse Power dissipation at 25oC: 600 watts at  
10/1000 μs (also see Fig 1,2, and 3).  
MECHANICAL AND PACKAGING  
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
• Impulse repetition rate (duty factor): 0.01%  
•
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-  
750, method 2026  
• tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
• Operating and Storage temperature: -65oC to +150oC  
•
•
MARKING: Body marked with part number  
• Thermal Resistance: 25 oC/W at 3/8 inch (10 mm) lead  
length from body, or 85°C/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1  
oz) and track width 1 mm, length 25 mm  
POLARITY: Band denotes cathode. Bidirectional  
not marked  
•
•
WEIGHT: 0.7 grams (approximate)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
• Steady-State Power: 5 watts @ TL=25oC 3/8 inch (10  
mm) from body, or 1.47 W when mounted on FR4 PC  
board described for thermal resistance  
•
See package dimensions on last page  
• Forward Voltage at 25oC: 3.5 Volts maximum @ 100  
Amp peak impulse of 8.3 ms half-sine wave  
(unidirectional only)  
• Solder temperatures: 260oC for 10 s (maximum)  
Copyright © 2005  
8-04-2005 REV F  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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MAP6KE56E3 MICROSEMI

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MAP6KE56TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 45.4V V(RWM), Unidirectional, 1 Element, Silicon, PL
MAP6KE6.8AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MAP6KE6.8CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MAP6KE6.8CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
MAP6KE6.8CATRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MAP6KE6.8E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 5.5V V(RWM), Unidirectional, 1 Element, Silicon, ROH

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