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MAP4KE12AE3 PDF预览

MAP4KE12AE3

更新时间: 2024-11-11 19:20:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
6页 416K
描述
Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

MAP4KE12AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.52
Is Samacsys:N最大击穿电压:12.6 V
最小击穿电压:11.4 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.13 W认证状态:Not Qualified
最大重复峰值反向电压:10.2 V表面贴装:NO
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MAP4KE12AE3 数据手册

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与MAP4KE12AE3相关器件

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MAP4KE12AE3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE12ATR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE12C MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-
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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CAE3 MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CAE3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CATR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CATRE3 MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CE3TR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CTR MICROSEMI

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Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-