Datasheet > MAP4KE12CATR

MAP4KE12CATR

更新时间： 2024-11-12 10:50:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	373K
描述
Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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数据手册

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MAP4KE12CATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

- Economical series for thru hole mounting

- Unidirectional (A) and Bidirectional (CA) construction

- Selections for 5.8 to 342 V standoff voltages (VWM)

- Fast response

400W Transient Voltage Suppressor

LEVELS

M, MA, MX, MXL

DEVICES

MP4KE6.8A thru MP4KE400CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500

Refer to MicroNote 129 for more details on the screening options.

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Suppresses transients up to 400 watts @ 10/1000 s (see Figure 1)

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

DO-41 (DO-204AL)

Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively.

Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:

Class 1: MP4KE5.0A to MP4KE91CA

Class 2: MP4KE5.0A to MP4KE47ACA

Class 3: MP4KE5.0A to MP4KE24CA

Class 4: MP4KE5.0A to MP4KE12CA

Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:

Class 1: MP4KE5.0A to MP4KE30CA

Class 2: MP4KE5.0A to MP4KE15CA

MAXIMUM RATINGS

Operating and Storage Temperature: -65 °C to +150 °C

Peak Pulse Power: 400 Watts at 10/1000 s (see Figures 1, 2 and 3 for t_W, waveform and

derating effects) with impulse repetition rate (duty factor) of 0.01 % or less

Thermal Resistance: 50 °C /W junction to leads @ 3/8 inch (10 mm) from body, or 110 C/W

junction to ambient when mounted on FR4 PC board with 4 mm²copper pads (1 oz) and track

width 1 mm, length 25 mm

Steady-State Power: 2.5 Watts @ TL=25 C at 3/8 inch (10 mm) from body, or 1.13 W at TA =

25 ºC on FR4 PC board described for thermal resistance

Forward Voltage at 25 C: 3.5 V @ 30 A with 8.3 ms half-sine wave (unidirectional only

Solder temperatures: 260 C for 10 s (maximum)

RF01006 Rev A, June 2010

High Reliability Product Group

Page 1 of 4

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与MAP4KE12CATR相关器件

型号	品牌	获取价格	描述	数据表
MAP4KE12CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 10.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MAP4KE12E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
MAP4KE12E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE12TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MAP4KE130	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MAP4KE130A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MAP4KE130AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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