Datasheet > MADS-001318-1451

MADS-001318-1451

更新时间： 2024-11-25 14:54:59

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
4页	313K
描述
Solderable GaAs Flip Chip Schottky Diode

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MADS-001318-1451 数据手册

Solderable GaAs Flip Chip Schottky Diode

MADS-001318-1451

Rev V3

Features

•

Low Series Resistance

Low Capacitance

High Cutoff Frequency

Silicon Nitride Passivation

Polyimide Scratch Protection

Designed for Easy Circuit Insertion

Can be Mounted with Solder or Conductive

Epoxy

MADS-001318-1451

Applications

•

ISM

Description

The MADS-001318-1451 anti-parallel pair is a

gallium arsenide flip chip Schottky barrier diode. This

device is fabricated on OMCVD epitaxial material

using a process designed for high device uniformity

and extremely low parasitics. This diode is fully

passivated with silicon nitride and has an additional

layer of polyimide for scratch protection. The

protective coating prevents damage to the junction

during automated or manual handling. The flip chip

configuration is suitable for pick and place insertion.

This device can be attached with solder or

conductive epoxy. The high cutoff frequency of this

diode allows use through millimeter wave

frequencies.

Ordering Information

Part Number

Package

MADS-001318-1451AG

MADS-001318-1451AP

100 piece gel pack

3000 piece tape and reel

Typical applications include single and double

balanced mixers in PCN transceivers and radios,

police radar detectors, and automotive radar

detectors. The devices can be used through

80 GHz. The MA4E1318 anti-parallel pair is

designed for use in sub harmonically pumped

mixers. Close matching of the diode characteristics

results in high LO suppression at the RF input.

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0026729

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