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MADS-002502-1246HP

更新时间： 2024-11-25 14:53:39
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MACOM /
页数 文件大小 规格书
5页 363K
描述
High Barrier Si Single-Pocket Tape

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MADS-002502-1246HP 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：R-XBCC-N2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：5.3
Is Samacsys：N配置：SINGLE
最大二极管电容：0.12 pF二极管元件材料：SILICON
二极管类型：MIXER DIODE频带：KU BAND
JESD-30 代码：R-XBCC-N2元件数量：1
端子数量：2封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED脉冲输入最大功率：0.1 W
认证状态：Not Qualified表面贴装：YES
技术：SCHOTTKY端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
肖特基势垒类型：HIGH BARRIERBase Number Matches：1

MADS-002502-1246HP 数据手册

 浏览型号MADS-002502-1246HP的Datasheet PDF文件第2页浏览型号MADS-002502-1246HP的Datasheet PDF文件第3页浏览型号MADS-002502-1246HP的Datasheet PDF文件第4页浏览型号MADS-002502-1246HP的Datasheet PDF文件第5页 
SURMOUNTTM Low, Medium, and High Barrier  
Silicon Schottky Diodes  
MA4E2502 Series  
Rev. V4  
Features  
•
•
•
•
Extremely Low Parasitic Capacitance &  
Inductance  
Surface Mountable in Microwavable Circuits, No  
Wirebonds Required  
Rugged HMIC Construction with Polyimide  
Scratch Protection  
Reliable, Multilayer Metalization with a Diffusion  
Barrier, 100% Stabilization Bake (300°C, 16  
hours)  
•
Lower Susceptibility to ESD Damage  
Description and Applications  
The MA4E2502 Surmount™ Series diodes are  
silicon low, medium, and high barrier Schottky  
devices fabricated with the patented Heterolithic  
Microwave Integrated Circuit (HMIC) process. HMIC  
circuits consist of silicon pedestals which form  
diodes or via conductors embedded in a glass  
dielectric, which acts as the low dispersion,  
microstrip transmission medium. The combination of  
silicon and glass allows HMIC devices to have  
excellent loss and power dissipation characteristics  
in a low profile, reliable device.  
The multilayer metallization employed in the  
fabrication of the Surmount™ Schottky junctions  
includes a platinum diffusion barrier, which permits  
all devices to be subjected to  
a
16-hour  
non-operating stabilization bake at 300°C.  
The “0502” outline allows for surface mount  
placement and multi-functional polarity orientations.  
The MA4E2502 series of Surmount™ Schottky  
diodes are recommended for use in microwave  
circuits through Ku band frequencies for lower power  
applications such as mixers, sub-harmonic mixers,  
detectors, and limiters. The HMIC construction  
facilitates the direct replacement of more fragile  
beam lead diodes with the corresponding  
Surmount™ diode, which can be connected to a  
hard or soft substrate circuit with solder.  
The Surmount™ Schottky devices are excellent  
choices for circuits requiring the small parasitics of a  
beam lead device coupled with the superior  
mechanical performance of a chip. The Surmount™  
structure employs very low resistance silicon vias to  
connect the Schottky contacts to the metalized  
mounting pads on the bottom surface of the chip.  
These devices are reliable, repeatable, and a lower  
cost performance solution to conventional devices.  
They have lower susceptibility to electrostatic  
discharge than conventional beam lead Schottky  
diodes.  
Ordering Information  
Part Number1  
MA4E2502x-1246W  
MA4E2502x-1246  
Package  
wafer on frame2  
100 piece Die in carrier  
3000 piece reel  
Waffle Pack  
MADS-002502-1246xP  
MADS-002502-1246xPW  
1. Replace x with L for low barrier, M for medium barrier or H for  
high barrier.  
2. Call factory for standard quantities for full wafers on frames.  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
For further information and support please visit:  
https://www.macom.com/support  
DC-0007659  
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