MADR-009269-000100
Single Driver for GaAs FET or PIN Diode Switches and Attenuators
Rev. V1
Functional Schematic
Features
• High Voltage CMOS Technology
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Complementary Outputs
Positive Voltage Control
CMOS device using TTL input levels
Low Power Dissipation
Low Cost Plastic SOICꢀ8 Package
100% Matte Tin Plating over Copper
HalogenꢀFree “Green” Mold Compound
260°C Reflow Compatible
Description
The MADRꢀ009269ꢀ000100 is a single channel
CMOS driver used to translate TTL control inputs
into complementary gate control voltages for GaAs
FET microwave switches and attenuators. High
speed analog CMOS technology is utilized to
achieve low power dissipation at moderate to high
speeds, encompassing most microwave switching
applications. The output HIGH level is optionally 0 to
+2.0V (relative to GND) to optimize the intermodulaꢀ
tion products of FET control devices at low frequenꢀ
cies. For driving PIN Diode circuits, the outputs are
nominally switched between +5V & ꢀ5V.
Pin Configuration3
Pin No.
Function
Output A
GND
1
2
3
4
5
6
7
8
VCC
C, Logic
VEE
Ordering Information1
VOPT
Part Number
Package
GND
MADRꢀ009269ꢀ000100
Bulk Packaging
Output B
MADRꢀ009269ꢀ000DIE
MADRꢀ009269ꢀ0001TR
Die 2
1000 piece reel
3. The bottom of the die should be isolated for part number
MADRꢀ009269ꢀ000DIE.
1. Reference Application Note M513 for reel size
information.
2. Die sales are available in waffle packs in increments of 100
pieces.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/AꢀCOM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/AꢀCOM has under developꢀ
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
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