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MAC9N-BG PDF预览

MAC9N-BG

更新时间: 2024-10-27 13:10:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅三端双向交流开关
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MAC9N-BG 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
*Motorola preferred devices  
TRIACS  
8.0 AMPERES RMS  
400 thru 800  
VOLTS  
Designed for high performance full-wave ac control applications where high  
noise immunity and high commutating di/dt are required.  
Blocking Voltage to 800 Volts  
On-State Current Rating of 8.0 Amperes RMS at 100°C  
Uniform Gate Trigger Currents in Three Modes  
High Immunity to dv/dt — 500 V/µs minimum at 125°C  
Minimizes Snubber Networks for Protection  
Industry Standard TO-220AB Package  
MT2  
High Commutating di/dt — 6.5 A/ms minimum at 125°C  
MT1  
MT2  
G
CASE 221A-06  
(TO-220AB)  
Style 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Value  
Unit  
V
DRM  
Peak Repetitive Off-State Voltage (1)  
(40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)  
Volts  
MAC9D  
MAC9M  
MAC9N  
400  
600  
800  
I
On-State RMS Current  
8.0  
A
A
T(RMS)  
(60 Hz, T = 100°C)  
C
I
Peak Non-repetitive Surge Current  
(One Full Cycle, 60 Hz, T = 125°C)  
80  
TSM  
J
2
2
I t  
Circuit Fusing Consideration (t = 8.3 ms)  
26  
16  
A sec  
P
Peak Gate Power (Pulse Width 1.0 µs, T = 80°C)  
Watts  
Watts  
°C  
GM  
C
P
Average Gate Power (t = 8.3 ms, T = 80°C)  
0.35  
G(AV)  
C
T
J
Operating Junction Temperature Range  
Storage Temperature Range  
40 to +125  
40 to +150  
T
°C  
stg  
THERMAL CHARACTERISTICS  
R
R
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
2.2  
62.5  
°C/W  
°C  
θJC  
θJA  
T
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds  
260  
L
(1)  
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
DRM  
voltage ratings of the devices are exceeded.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–49  
Motorola Thyristor Device Data  

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