SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
TRIACS
8.0 AMPERES RMS
400 thru 800
VOLTS
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
•
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100°C
Uniform Gate Trigger Currents in Three Modes
High Immunity to dv/dt — 500 V/µs minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
MT2
High Commutating di/dt — 6.5 A/ms minimum at 125°C
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Value
Unit
V
DRM
Peak Repetitive Off-State Voltage (1)
(–40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Volts
MAC9D
MAC9M
MAC9N
400
600
800
I
On-State RMS Current
8.0
A
A
T(RMS)
(60 Hz, T = 100°C)
C
I
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, T = 125°C)
80
TSM
J
2
2
I t
Circuit Fusing Consideration (t = 8.3 ms)
26
16
A sec
P
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)
Watts
Watts
°C
GM
C
P
Average Gate Power (t = 8.3 ms, T = 80°C)
0.35
G(AV)
C
T
J
Operating Junction Temperature Range
Storage Temperature Range
–40 to +125
–40 to +150
T
°C
stg
THERMAL CHARACTERISTICS
R
R
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
2.2
62.5
°C/W
°C
θJC
θJA
T
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
260
L
(1)
V
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
DRM
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
3–49
Motorola Thyristor Device Data