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MAC9NG

更新时间： 2024-10-27 03:24:39
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置三端双向交流开关局域网
页数 文件大小 规格书
6页 66K
描述
Triacs Silicon Bidirectional Thyristors

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中文翻译

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MAC9NG 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.30.00.80Factory Lead Time：1 week
风险等级：5.18Is Samacsys：N
外壳连接：MAIN TERMINAL 2配置：SINGLE
关态电压最小值的临界上升速率：500 V/us最大直流栅极触发电流：50 mA
最大直流栅极触发电压：1.5 V最大维持电流：50 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3最大漏电流：2 mA
元件数量：1端子数量：3
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大均方根通态电流：8 A
断态重复峰值电压：800 V子类别：TRIACs
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：TRIAC
Base Number Matches：1

MAC9NG 数据手册

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MAC9D, MAC9M, MAC9N  
Preferred Device  
Triacs  
Silicon Bidirectional Thyristors  
Designed for high performance full-wave ac control applications  
where high noise immunity and high commutating di/dt are required.  
http://onsemi.com  
Features  
TRIACS  
• Blocking Voltage to 800 Volts  
• On-State Current Rating of 8.0 Amperes RMS at 100°C  
• Uniform Gate Trigger Currents in Three Quadrants  
• High Immunity to dv/dt − 500 V/ms minimum at 125°C  
• Minimizes Snubber Networks for Protection  
• Industry Standard TO-220AB Package  
• High Commutating di/dt − 6.5 A/ms minimum at 125°C  
• Pb−Free Packages are Available*  
8 AMPERES RMS  
400 thru 800 VOLTS  
MT2  
MT1  
G
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
MAC9xG  
AYWW  
(T = −40 to 125°C, Sine Wave,  
J
50 to 60 Hz, Gate Open)  
MAC9D  
400  
600  
800  
TO−220AB  
CASE 221A−09  
STYLE 4  
MAC9M  
MAC9N  
1
2
3
On-State RMS Current  
(Full Cycle Sine Wave, 60 Hz, T = 100°C)  
I
8.0  
A
A
T(RMS)  
x
A
Y
= D, M, or N  
= Assembly Location  
= Year  
C
Peak Non-Repetitive Surge Current  
(One Full Cycle Sine Wave, 60 Hz,  
T = 125°C)  
J
I
80  
TSM  
WW = Work Week  
G
= Pb−Free Package  
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
26  
16  
A sec  
PIN ASSIGNMENT  
Peak Gate Power  
P
W
W
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
1
Main Terminal 1  
Average Gate Power  
P
0.35  
2
3
4
G(AV)  
Main Terminal 2  
Gate  
(t = 8.3 ms, T = 80°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
Main Terminal 2  
T
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MAC9D  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
MAC9DG  
TO−220AB  
(Pb−Free)  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
MAC9M  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC9MG  
TO−220AB  
(Pb−Free)  
MAC9N  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MAC9NG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 3  
MAC9/D  
 
123456

中文翻译

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MAC9NG 替代型号

型号 品牌 替代类型 描述 数据表
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