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MAC08MT1 PDF预览

MAC08MT1

更新时间: 2024-10-27 22:24:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 三端双向交流开关
页数 文件大小 规格书
5页 208K
描述
TRIAC 0.8 AMPERE RMS 200 thru 600 Volts

MAC08MT1 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Silicon Bidirectional Thyristors  
*Motorola preferred devices  
Designed for use in solid state relays, MPU interface, TTL logic and other light  
industrial or consumer applications. Supplied in surface mount package for use in  
automated manufacturing.  
TRIAC  
0.8 AMPERE RMS  
200 thru 600 Volts  
Sensitive Gate Trigger Current in Four Trigger Modes  
Blocking Voltage to 600 Volts  
Glass Passivated Surface for Reliability and Uniformity  
Surface Mount Package  
Devices Supplied on 1 K Reel  
CASE 318E-04  
(SOT-223)  
STYLE 11  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Blocking Voltage  
V
DRM  
Volts  
(1/2 Sine Wave, Gate Open, T = 25 to 110°C)  
J
MAC08BT1  
MAC08DT1  
MAC08MT1  
200  
400  
600  
On-State Current RMS (T = 80°C)  
I
0.8  
10  
Amps  
Amps  
C
T(RMS)  
Peak Non-repetitive Surge Current  
I
TSM  
(One Full Cycle, 60 Hz, T = 25°C)  
C
2
2
Circuit Fusing Considerations (t = 8.3 ms)  
I t  
0.4  
5.0  
A s  
Peak Gate Power (t < 2.0 µs)  
P
Watts  
Watts  
°C  
GM  
Average Gate Power (T = 80°C, t = 8.3 ms)  
P
0.1  
C
G(AV)  
Operating Junction Temperature Range  
Storage Temperature Range  
T
J
–40 to +110  
–40 to +150  
260  
T
°C  
stg  
Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum)  
THERMAL CHARACTERISTICS  
T
L
°C  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Ambient  
PCB Mounted per Figure 1  
R
156  
°C/W  
θJA  
Thermal Resistance, Junction to Tab  
Measured on Anode Tab Adjacent to Epoxy  
R
25  
°C/W  
θJT  
1. V  
DRM  
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–40  
Motorola Thyristor Device Data  

MAC08MT1 替代型号

型号 品牌 替代类型 描述 数据表
Z0103MN0 WEEN

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