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MAC08MT1

更新时间: 2024-10-29 18:06:23
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科信 - KEXIN /
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描述
Triacs

MAC08MT1 数据手册

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SMD Type  
Thyristor  
Sensitive Gate Triacs  
MAC08BT1,MAC08MT1  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
Sensitive Gate Trigger Current in Four Trigger Modes  
Blocking Voltage to 600 Volts  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
Glass Passivated Surface for Reliability and Uniformity  
Surface Mount Package  
4
1 Main Terminal 1  
2 Main Terminal 2  
3 Gate  
1
2
3
4 Main Terminal 2  
+0.1  
0.70  
-0.1  
2.9  
4.6  
Absolute Maximum Ratings Ta = 25  
Parameter  
Peak Repetitive Forward and Reverse Blocking Voltage* MAC08BT1  
MAC08MT1  
Symbol  
Rating  
200  
Unit  
V
VDRM  
and  
600  
V
VRRM  
Forward Current RMS  
IT(RMS)  
0.8  
A
A
ITSM  
8.0  
0.4  
5.0  
0.1  
156  
230  
Peak Forward Surge Current, TA = 25  
I2t  
A2s  
W
Circuit Fusing Considerations (t = 8.3 ms)  
PGM  
Peak Gate Power  
Forward, TA = 25  
Forward, TA = 25  
PGF(AV)  
W
Average Gate Power  
R
JA  
/W  
Thermal Resistance, Junction to Ambient  
Lead Solder Temperature( 1/16"from case, 10 s max)  
Operating Junction Temperature Range @ Rated VRRM and VDRM  
TJ  
-40 to +110  
-40 to +150  
Tstg  
Storage Temperature Range  
*TJ = 25 to 125 , RGK = 1 k  
Electrical Characteristics (Ta = 25 ,RGK = 1 k unless otherwise noted.)  
Parameter  
Symbol  
Testconditons  
Min Max Unit  
10  
Peak Forward or Reverse TC = 25  
IDRM, IRRM VAK = Rated VDRM or VRRM  
A
200  
Blocking Current  
TC = 110  
Forward "On" Voltage*1  
VTM  
IGT  
1.9  
10  
2.0  
5
V
ITM = 1.1 A Peak @ TA = 25  
VD=12 V, RL = 100 Ohms  
VD=12V,RL=100 Ohms  
mA  
V
Gate Trigger Current (Continuous dc)*2 TC = 25  
Gate Trigger Voltage (Continuous dc)  
Holding Current  
VGT  
IH  
mA  
VD=12V,Gate Open,initiating current= 20mA  
Critical Rate of Rise of Commutation Voltage *  
(dv/dt)c  
1.5  
10  
V/  
V/  
s
s
Vpk = Rated VDRM, TC= 110 , Gate Open,  
Exponential Method  
Critical RateofRise of Off State Voltage  
dv/dt  
* f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/ mS On-State Current Duration = 2.0 mS,  
VDRM = 200 V,Gate Unenergized, TC = 110 ,Gate Source Resistance = 150 , See Figure 10)  
1
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