SMD Type
Thyristor
Sensitive Gate Triacs
MAC08BT1,MAC08MT1
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
4
1 Main Terminal 1
2 Main Terminal 2
3 Gate
1
2
3
4 Main Terminal 2
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Peak Repetitive Forward and Reverse Blocking Voltage* MAC08BT1
MAC08MT1
Symbol
Rating
200
Unit
V
VDRM
and
600
V
VRRM
Forward Current RMS
IT(RMS)
0.8
A
A
ITSM
8.0
0.4
5.0
0.1
156
230
Peak Forward Surge Current, TA = 25
I2t
A2s
W
Circuit Fusing Considerations (t = 8.3 ms)
PGM
Peak Gate Power
Forward, TA = 25
Forward, TA = 25
PGF(AV)
W
Average Gate Power
R
JA
/W
Thermal Resistance, Junction to Ambient
Lead Solder Temperature( 1/16"from case, 10 s max)
Operating Junction Temperature Range @ Rated VRRM and VDRM
TJ
-40 to +110
-40 to +150
Tstg
Storage Temperature Range
*TJ = 25 to 125 , RGK = 1 k
Electrical Characteristics (Ta = 25 ,RGK = 1 k unless otherwise noted.)
Parameter
Symbol
Testconditons
Min Max Unit
10
Peak Forward or Reverse TC = 25
IDRM, IRRM VAK = Rated VDRM or VRRM
A
200
Blocking Current
TC = 110
Forward "On" Voltage*1
VTM
IGT
1.9
10
2.0
5
V
ITM = 1.1 A Peak @ TA = 25
VD=12 V, RL = 100 Ohms
VD=12V,RL=100 Ohms
mA
V
Gate Trigger Current (Continuous dc)*2 TC = 25
Gate Trigger Voltage (Continuous dc)
Holding Current
VGT
IH
mA
VD=12V,Gate Open,initiating current= 20mA
Critical Rate of Rise of Commutation Voltage *
(dv/dt)c
1.5
10
V/
V/
s
s
Vpk = Rated VDRM, TC= 110 , Gate Open,
Exponential Method
Critical Rate–of–Rise of Off State Voltage
dv/dt
* f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/ mS On-State Current Duration = 2.0 mS,
VDRM = 200 V,Gate Unenergized, TC = 110 ,Gate Source Resistance = 150 , See Figure 10)
1
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