MA7D52A

更新时间： 2024-11-11 22:26:51

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	68K
描述
Silicon epitaxial planar type (cathode common)

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数据手册

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MA7D52A 数据手册

Schottky Barrier Diodes (SBD)

MA3D752, MA3D752A (MA7D52, MA7D52A)

Silicon epitaxial planar type (cathode common)

Unit : mm

4.6 0.2

For switching power supply

9.9 0.3

2.9 0.2

I Features

φ 3.2 0.1

•

Low forward rise voltage V_F

TO-220D (Full-pack package) with high dielectric breakdown

voltage > 5.0 kV

1.4 0.2

1.6 0.2

2.6 0.1

•

Easy-to-mount, caused by its V cut lead end

0.8 0.1

0.55 0.15

I Absolute Maximum Ratings T_a= 25°C

2.54 0.3

5.08 0.5

Parameter

Symbol

V_RRM

Rating

Unit

MA3D752

MA3D752A

MA3D752

MA3D752A

Repetitive peak

reverse voltage

1 : Anode

2 : Cathode

3 : Anode

V_RSM

Non repetitive peak

reverse voltage

TO-220D Package

Average forward current

I_F(AV)

I_FSM

Internal Connection

Non-repetitive peak forward

surge current^*

120

Junction temperature

Storage temperature

T_j

−40 to +125

°C

T_stg

Note)

* : Half sine-wave; 10 ms/cycle

I Electrical Characteristics T_a= 25°C

Parameter

Symbol

I_R

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

MA3D752

V_R= 40 V, T_C= 25°C

V_R= 45 V, T_C= 25°C

MA3D752A

0.55

Forward voltage (DC)

Thermal resistance

V_F

I_F= 10 A, T_C= 25°C

R_th(j-c)

Direct current (between junction and case)

°C/W

Note) Rated input/output frequency: 100 MHz

Note) The part number in the parenthesis shows conventional part number.

632

12 3

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