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MA7D69 PDF预览

MA7D69

更新时间: 2024-11-12 21:17:03
品牌 Logo 应用领域
松下 - PANASONIC 局域网二极管
页数 文件大小 规格书
3页 154K
描述
Mixer Diode, Very High Frequency, Silicon, TO-220AB, TO-220D, 3 PIN

MA7D69 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.84
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:MIXER DIODE
频带:VERY HIGH FREQUENCYJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MA7D69 数据手册

 浏览型号MA7D69的Datasheet PDF文件第2页浏览型号MA7D69的Datasheet PDF文件第3页 
Schottky Barrier Diodes (SBD)  
MA7D69  
Silicon epitaxial planer type (cathode common)  
Unit : mm  
For switching power supply  
4.6±0.2  
9.9±0.3  
2.9±0.2  
Features  
Low forward voltage VF  
ø3.2±0.1  
High reverse voltage VRRM : 150V type  
TO-220D (full-pack package) with high dielectric strength > 5.0
Lead end to be V cut for easy mounting  
1.4±0.2  
2.6±0.1  
1.6±0.2  
0.8±0.1  
0.55±0.15  
2.54±03  
3
5.08±0.5  
1
2
Absolute Maximum Ratings (Ta= 25˚
1 : Anode  
2 : Cathode  
3 : Anode  
Parameter  
Symb
M  
F(AV)  
Rating  
150  
Unt  
V
Repetitive peak reverse voltage  
Average forward current  
Non-repetitive peak forward surge current  
Junction temperature  
TO-220D Package  
1
A
IFSM*  
80  
A
Internal Connection  
Tj  
– 40 to +125  
– 2to + 70  
˚C  
˚C  
Operating ambient temperture  
Tstg  
* Sine half wave : 10ms/ycle  
1
2
3
Electrical Characteristics (Ta= 25˚C)  
Pa
Reverse current (
Forward voltage (DC
Thermal resistance  
Symbol  
Condition  
min  
typ  
max  
3
Unit  
mA  
IR  
VR=150V, TC= 25˚C  
F  
IF= 5V, TC= 25˚C  
0.85  
3
V
Rth(j-c)  
Flat direct current between junction and case  
˚C/W  
Rated input/output frequency : 50MHz  

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