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MA4P7441F-1091T PDF预览

MA4P7441F-1091T

更新时间: 2024-11-24 03:02:07
品牌 Logo 应用领域
泰科 - TE 二极管
页数 文件大小 规格书
6页 136K
描述
Non Magnetic SMQ HIPAX PIN Diode

MA4P7441F-1091T 数据手册

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Non Magnetic SMQ HIPAX  
PIN Diode  
V 1.00  
Features  
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Non-Magnetic Package Suitable for MRI Applications  
Rectangular MELF SMQ Ceramic Package  
Hermetically Sealed  
Lower Rs for Lower Series Loss  
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Longer t L for Lower Intermodulation Distortion  
Lower Cj for Higher Series Isolation  
Higher Average Incident Power Handling Capability  
Description  
The MA4P7441F-1091T is a surface mountable PIN diode  
in a Non-Magnetic ( patent pending ) Metal Electrode  
Leadless Faced (MELF) package. The device incorporates  
M/A-COM’s proven HIPAX technology to produce a low  
inductance ceramic package with no ribbons or whisker  
wires. The package utilizes M/A-COM’s new  
non- magnetic plating process to provide an extremely low  
permeability, hermetically sealed package. Incorporated in  
the package is a passivated PIN diode that is full face  
bonded on both the cathode and anode of the chip to  
maximize surface area for lower electrical and thermal  
resistance. The MA4P7441F-1091T has been  
comprehensively characterized both electrically and  
mechanically to ensure repeatable and predictable  
performance. This MA4P7441F-1091T Non-Magnetic  
device is similar in electrical performance to the  
MA4P4001F-1091T Magnetic part number.  
Designed for Automated Assembly  
These SMQ PIN diodes are designed for high volume tape  
and reel assembly. The rectangular package design provides  
for highly efficient automatic pick and place assembly  
techniques. The parallel flat surfaces are suitable for key  
jaw or vacuum pickup techniques. All solder able surfaces  
are tin plated and compatible with reflow and vapor phase  
soldering methods.  
Enviornmental Capability  
HIPAX devices are applicable for use in industrial and  
military applications and can be screened to meet the  
environmental requirements of MIL-STD-750,  
MIL-STD-202 as well as other military standards. The table  
below lists some of the MIL-STD 750 tests the device is  
designed to meet.  
Applications  
The diodes are well suited for use in low loss, low  
distortion, and high power switching circuits applicable for  
high magnetic field environments from HF through UHF  
frequencies. The lower thermal resistance of this device  
provides excellent higher average performance at RF power  
incident levels up to 200 watts CW. This device is designed  
to meet the most rigorous electrical and mechanical  
requirements of MRI testing environments.  
MIL-STD-750  
Method  
Test  
High Temperature Storage  
Temperature Shock  
HTRB  
Description  
+150 °C, for 340 Hours  
1031  
1051  
-65 °C to +125 °C, 20 Cycles  
80% of rated VB, +150 °C, for 96 Hours  
No Initial Conditioning, 85 % RH, +85° C  
Dye Penetrant Visual  
1038  
Moisture Resistance  
Gross Leak  
1021  
1071 Cond. E  
2046  
Vibration Fatigue  
Solderability  
20,000 G’s, 60 Hz, x, y, z axis  
Test Temperature = +245 °C  
2026  

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