MA4P7446F-1091T
Non Magnetic SMQ MELF PIN Diode
V3
Features
♦ Non-Magnetic Package Suitable for MRI
Applications
♦ Rectangular MELF SMQ Ceramic Package
♦ Hermetically Sealed
♦ Low Rs for Low Series Loss
♦ Long τL for Lower Intermodulation Distortion
♦ Low Cj for High Series Isolation
♦ High Average Incident Power Handling
♦ RoHS Compliant
Description
The MA4P7446F-1091T is a surface mountable
PIN diode in a non-magnetic, Metal Electrode
Leadless Faced (MELF) package. The device
incorporates M/A-COM Technology Solutions
time proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or
whisker wires. Incorporated in the package is a
hard glass passivated, CERMACHIP™ PIN chip
that is full face bonded on both the cathode and
anode to maximize surface area for the lowest
electrical and thermal resistance. The package
utilizes a non-magnetic plating process that
provides for a package with extremely low
permeability. The MA4P7446F-1091T has been
comprehensively characterized both electrically
and mechanically to ensure repeatable and
predictable performance. The non-magnetic
MA4P7446F-1091T is the electrical equivalent of
its magnetic counterpart the MA4P4006F-1091T.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for highly efficient
automatic pick and place assembly techniques. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup techniques. All solderable surfaces
are tin plated and compatible with industry standard
reflow and vapor phase soldering methods.
Absolute Maximum Ratings1 @ 25°C
Parameter
Absolute Maximum
-65°C to +125°C
Operating Temperature
Storage Temperature
Diode Junction Temperature
Applications
-65°C to +150°C
This diode is well suited for use in low loss, low
distortion, high power switching circuits and can
be used in high magnetic field environments at HF
through UHF frequencies. The low thermal
resistance of this device provides excellent
performance at high RF power incident levels, up
to 500 watts CW. This device is designed to meet
the most demanding electrical and mechanical
MRI environments.
+175 °C Continuous
Diode Mounting Temperature +235°C for 10 seconds
RF C.W. Incident Power
Forward D.C. Current
+ 57dBm C.W.
+500 mA
Reverse D.C. Voltage @ -10 uA
- 600V
1. Exceeding these limits may cause permanent damage.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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