MA4P7435NM-1091T
Non Magnetic MELF PIN Diode
V2
Features
♦ Non-Magnetic Package Suitable for MRI
Applications
♦ Rectangular MELF SMQ Ceramic Package
♦ Low Rs for Low Series Loss
♦ Longer τL for Low Inter-Modulation Distortion
♦ High Average Incident Power Handling
♦ RoHS Compliant
Description and Applications
The MA4P7435NM-1091T is a surface mountable
PIN diode in a non-magnetic, Metal Electrode
Leadless Faced (MELF) package. The device
incorporates M/A-COM Technology’s proven
HIPAX technology to produce a low inductance
ceramic package with no ribbons or whisker wires.
The package utilizes M/A-COM Technology’s new
non-magnetic plating process to provide an
extremely low magnetic permeability, hermetically
sealed package. Incorporated in the package is a
glass passivated PIN chip that is full face bonded
on both the cathode and anode to maximize
surface area for lower series and thermal
resistance. The MA4P7435NM-1091T has been
comprehensively characterized both electrically
and mechanically to ensure repeatable and
predictable performance. The diode is well suited
for use in low loss, low distortion, high power
switching circuits and is especially designed for
use in high magnetic field environments from HF
through UHF frequencies. The low thermal
resistance of this device also provides excellent
performance at high incident RF power levels. This
device has been designed to perform well in the
most rigorous electrical and mechanical MRI
environments.
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for ease of use in most
automatic pick and place assembly operations. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup techniques. All solder able surfaces
are tin plated and compatible with reflow and vapor
phase soldering methods.
Absolute Maximum Ratings1 @ 25°C
Parameter
Absolute Maximum
-65°C to +125°C
Operating Temperature
Storage Temperature
Diode Junction Temperature
-65°C to +150°C
+175°C Continuous
Diode Mounting Temperature +265°C for 10 seconds
RF C.W. Incident Power
Forward D.C. Current
+ 60dBm C.W.
+500mA
Reverse D.C. Voltage @ -10μA
-1100V
1. Exceeding these limits may cause permanent
damage.
1
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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