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MA3Z792E PDF预览

MA3Z792E

更新时间: 2024-11-11 22:08:03
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松下 - PANASONIC /
页数 文件大小 规格书
2页 48K
描述
Silicon epitaxial planar type

MA3Z792E 数据手册

 浏览型号MA3Z792E的Datasheet PDF文件第2页 
Schottky Barrier Diodes (SBD)  
MA3Z792E  
Silicon epitaxial planar type  
Unit : mm  
0.425  
2.1 0.1  
For super-high speed switching circuit  
For small current rectification  
0.425  
1.25 0.1  
I Features  
1
2
Two MA3Z792s diodes (cathode common) are contained in the S-  
mini type 3-pin package  
3
Allowing to rectify under (IF(AV) = 100 mA) condition  
Optimum for high-frequency rectification because of its short  
reverse recovery time (trr)  
Low VF (forward rise voltage), with high rectification efficiency  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VR  
Rating  
30  
Unit  
V
1 : Anode 1  
2 : Anode 2  
Reverse voltage (DC)  
3 : Cathode 1, 2  
EIAJ : SC-70  
Flat S-Mini Type Package (3-pin)  
Repetitive peak reverse voltage  
VRRM  
IFM  
30  
V
Single  
Double*  
Single  
300  
200  
100  
70  
mA  
Peak forward  
current  
2
2
Marking Symbol: M3Z  
Internal Connection  
IF(AV)  
mA  
A
Average forward  
current  
Double*  
Non-repetitive peak forward  
IFSM  
1
1
surge current*  
1
2
Junction temperature  
Storage temperature  
Tj  
125  
°C  
°C  
3
Tstg  
55 to +125  
1
2
Note)  
*
*
:
The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)  
: Value per chip  
I Electrical Characteristics Ta = 25°C  
Parameter  
Reverse current (DC)  
Forward voltage (DC)  
Terminal capacitance  
Reverse recovery time*  
Symbol  
Conditions  
Min  
Typ  
Max  
15  
Unit  
µA  
V
IR  
VF  
Ct  
trr  
VR = 30 V  
IF = 100 mA  
0.55  
VR = 0 V, f = 1 MHz  
20  
2
pF  
ns  
IF = IR = 100 mA  
Irr = 10 mA, RL = 100 Ω  
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a  
human body and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 250 MHz  
3. * : trr measuring circuit  
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 10 mA  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
W.F.Analyzer  
(SAS-8130)  
Ri = 50 Ω  
1

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