Datasheet > M95640-DRDW8TG

M95640-DRDW8TG

更新时间： 2024-11-12 00:59:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
41页	749K
描述
64-Kbit serial SPI bus EEPROM - 105C operation

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中文翻译

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数据手册

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M95640-DRDW8TG 数据手册

M95640-DRE

64-Kbit serial SPI bus EEPROM - 105°C operation

Datasheet - production data

Features

• Compatible with the Serial Peripheral Interface

(SPI) bus

• Memory array

SO8 (MN)

150 mil width

– 64 Kbit (8 Kbytes) of EEPROM

– Page size: 32 bytes

– Write protection by block: 1/4, 1/2 or whole

memory

– Additional Write lockable Page

(Identification page)

TSSOP8 (DW)

169 mil width

• Extended temperature and voltage range

– Up to 105 °C (V from 1.8 V to 5.5 V)

• High speed clock frequency

– 20 MHz for V ≥ 4.5 V

– 10 MHz for V ≥ 2.5 V

– 5 MHz for V ≥ 1.8 V

• Schmitt trigger inputs for noise filtering

WFDFPN8 (MF)

2 x 3 mm

• Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

• Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 900 k Write cycles at 105 °C

• Data retention

– more than 50 years at 105 °C

– 200 years at 55 °C

• ESD Protection (Human Body Model)

– 4000 V

• Packages

– RoHS-compliant and halogen-free

(ECOPACK2 )

January 2015

DocID027381 Rev 1

1/41

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...41

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