5秒后页面跳转
M95640-DRDW3TP/K PDF预览

M95640-DRDW3TP/K

更新时间: 2024-11-12 17:33:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
44页 802K
描述
汽车用64 Kbit SPI总线EEPROM,带高速时钟

M95640-DRDW3TP/K 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:TSSOP, TSSOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:14 weeks
风险等级:0.95最大时钟频率 (fCLK):5 MHz
数据保留时间-最小值:40耐久性:4000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2/5 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.2 mm
串行总线类型:SPI最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mm最长写入周期时间 (tWC):4 ms
写保护:HARDWARE/SOFTWARE

M95640-DRDW3TP/K 数据手册

 浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第2页浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第3页浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第4页浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第5页浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第6页浏览型号M95640-DRDW3TP/K的Datasheet PDF文件第7页 
M95640-A125  
M95640-A145  
Automotive 64-Kbit serial SPI bus EEPROMs  
with high-speed clock  
Datasheet - production data  
Features  
Compatible with the Serial Peripheral Interface  
(SPI) bus  
Memory array  
SO8 (MN)  
150 mil width  
– 64 Kbit (8 Kbyte) of EEPROM  
– Page size: 32 byte  
– Write protection by block: 1/4, 1/2 or whole  
memory  
– Additional Write lockable Page  
(Identification page)  
TSSOP8 (DW)  
169 mil width  
Extended temperature and voltage ranges  
– Up to 125 °C (V from 1.7 V to 5.5 V)  
CC  
– Up to 145 °C (V from 2.5 V to 5.5 V)  
CC  
High speed clock frequency  
– 20 MHz for V 4.5 V  
CC  
– 10 MHz for V 2.5 V  
CC  
– 5 MHz for V 1.7 V  
CC  
WFDFPN8 (MF)  
2 x 3 mm  
Schmitt trigger inputs for noise filtering  
Short Write cycle time  
– Byte Write within 4 ms  
– Page Write within 4 ms  
Write cycle endurance  
– 4 million Write cycles at 25 °C  
– 1.2 million Write cycles at 85 °C  
– 600 k Write cycles at 125 °C  
– 400 k Write cycles at 145 °C  
Data retention  
– 50 years at 125 °C  
– 100 years at 25 °C  
ESD Protection (Human Body Model)  
– 4000 V  
Packages  
– RoHS-compliant and halogen-free  
®
(ECOPACK2 )  
January 2016  
DocID022579 Rev 9  
1/44  
This is information on a product in full production.  
www.st.com  
 

M95640-DRDW3TP/K 替代型号

型号 品牌 替代类型 描述 数据表
M95640-WDW6TP STMICROELECTRONICS

类似代替

64Kbit and 32Kbit Serial SPI Bus EEPROM With High Speed Clock
M95640-WMN6TP STMICROELECTRONICS

功能相似

64Kbit and 32Kbit Serial SPI Bus EEPROM With High Speed Clock

与M95640-DRDW3TP/K相关器件

型号 品牌 获取价格 描述 数据表
M95640-DRDW8TG STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRDW8TP STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRDW8TP/K STMICROELECTRONICS

获取价格

64 Kbit串行SPI总线EEPROM,具有高速时钟,工作温度105°C
M95640-DRE STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRMF3TG/K STMICROELECTRONICS

获取价格

汽车用64 Kbit SPI总线EEPROM,带高速时钟
M95640-DRMF8TG STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRMF8TP STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRMN3TP/K STMICROELECTRONICS

获取价格

汽车用64 Kbit SPI总线EEPROM,带高速时钟
M95640-DRMN8TG STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation
M95640-DRMN8TP STMICROELECTRONICS

获取价格

64-Kbit serial SPI bus EEPROM - 105C operation