Datasheet > M93S66-WDW5T

M93S66-WDW5T

更新时间： 2023-02-26 14:34:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
23页	164K
描述
IC,SERIAL EEPROM,256X16,CMOS,TSSOP,8PIN,PLASTIC

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M93S66-WDW5T 数据手册

M93S66, M93S56, M93S46

Figure 2A. DIP Pin Connections

Figure 2B. SO and TSSOP Pin Connections

M93Sx6

PRE

AI02021

AI02022

Table 2. Absolute Maximum Ratings ⁽¹⁾

Symbol

Parameter

Value

Unit

T_A

Ambient Operating Temperature

–40 to 125

–65 to 150

°C

T_STG

Storage Temperature

°C

T_LEAD

Lead Temperature, Soldering

(SO8 package)

(PSDIP8 package)

40 sec

10 sec

215

260

V_IO

Input or Output Voltages (Q = V_OHor Hi-Z)

Supply Voltage

–0.3 to V_CC+0.5

–0.3 to 6.5

V_CC

Electrostatic Discharge Voltage (Human Body model) ⁽²⁾

Electrostatic Discharge Voltage (Machine model) ⁽³⁾

4000

500

V_ESD

Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"

may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other

conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum

Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other

relevant quality documents.

2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω).

3. EIAJ IC-121 (Condition C) (200pF, 0 Ω).

DESCRIPTION (cont’d)

Write, Write All and instructions used to set the

memory protection. A Read instruction loads the

address of the first word to be read into an internal

address pointer. The data contained at this address

is then clocked out serially. The address pointer is

automatically incremented after the data is output

and, if the Chip Select input (S) is held High, the

M93Sx6 can output a sequential stream of data

words. In this way, the memory can be read as a

data stream from 16 to 4096 bits (for the M93S66),

or continuously as the address counter automat-

ically rolls over to ’00’ when the highest address is

reached.

The M93Sx6 memory is accessed through a serial

input (D) and output (Q) using the MICROWIRE

bus protocol. The M93Sx6 is specified at 5V ±10%,

the M93Sx6-W specified at 2.5V to 5.5V and the

M93Sx6-R specified at 1.8V to 3.6V.

The M93S66/S56/S46 memory is divided into

256/128/64 x16 bit words respectively. These

memory devices are available in both PSDIP8,

SO8 and TSSOP8 packages.

The M93Sx6 memory is accessed by a set of

instructions which includes Read, Write, Page

2/23

123 4 5 6 7...23

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与M93S66-WDW5T相关器件

型号	品牌	描述	获取价格	数据表
M93S66-WDW6	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格
M93S66-WDW6G	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格
M93S66-WDW6P	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格
M93S66-WDW6T	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格
M93S66-WDW6TG	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格
M93S66-WDW6TP	STMICROELECTRONICS	4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection	获取价格

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