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M93S66-WMN1 PDF预览

M93S66-WMN1

更新时间: 2024-02-10 23:18:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
23页 162K
描述
256X16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SO-8

M93S66-WMN1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.150 INCH, PLASTIC, SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.83最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.00001 A子类别:EEPROMs
最大压摆率:0.0015 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWARE

M93S66-WMN1 数据手册

 浏览型号M93S66-WMN1的Datasheet PDF文件第2页浏览型号M93S66-WMN1的Datasheet PDF文件第3页浏览型号M93S66-WMN1的Datasheet PDF文件第4页浏览型号M93S66-WMN1的Datasheet PDF文件第5页浏览型号M93S66-WMN1的Datasheet PDF文件第6页浏览型号M93S66-WMN1的Datasheet PDF文件第7页 
M93S66, M93S56, M93S46  
4K/2K/1K (x16) Serial Microwire Bus EEPROM  
with Block Protection  
INDUSTRY STANDARD MICROWIRE BUS  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATA RETENTION  
SINGLE ORGANIZATION by WORD (x16)  
WORD and ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
8
8
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
1
1
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SO8 (MN)  
150mil Width  
PSDIP8 (BN)  
0.25mm Frame  
SINGLE SUPPLY VOLTAGE:  
– 4.5V to 5.5V for M93Sx6 version  
– 2.5V to 5.5V for M93Sx6-W version  
– 1.8V to 3.6V for M93Sx6-R version  
USER DEFINED WRITE PROTECTED AREA  
PAGE WRITE MODE (4 words)  
8
1
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
TSSOP8 (DW)  
169mil Width  
ENHANCED ESD and LATCH-UP  
PERFORMANCES  
Figure 1. Logic Diagram  
DESCRIPTION  
This M93S46/S56/S66 specification covers a  
range of 4K/2K/1K bit serial EEPROM products  
respectively. In this text, products are referred to as  
M93Sx6. The M93Sx6 is an Electrically Erasable  
Programmable Memory (EEPROM) fabricated with  
STMicroelectronics’s High Endurance Single  
Polysilicon CMOS technology.  
V
CC  
D
C
Q
Table 1. Signal Names  
M93Sx6  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
S
D
PRE  
W
Q
C
PRE  
W
Protect Enable  
Write Enable  
V
SS  
AI02020  
VCC  
VSS  
Supply Voltage  
Ground  
February 1999  
1/23  

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