M93S66-WDW6TG

更新时间： 2024-02-25 03:14:21

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
34页	526K
描述
4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection

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数据手册

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M93S66-WDW6TG 数据手册

M93S66, M93S56

M93S46

4Kbit, 2Kbit and 1Kbit (16-bit wide)

MICROWIRE Serial Access EEPROM with Block Protection

FEATURES SUMMARY

■

Industry Standard MICROWIRE Bus

Figure 1. Packages

■

Single Supply Voltage:

–

4.5 to 5.5V for M93Sx6

2.5 to 5.5V for M93Sx6-W

1.8 to 5.5V for M93Sx6-R

■

Single Organization: by Word (x16)

Programming Instructions that work on: Word

or Entire Memory

■

Self-timed Programming Cycle with Auto-

Erase

PDIP8 (BN)

■

User Defined Write Protected Area

Page Write Mode (4 words)

Ready/Busy Signal During Programming

Speed:

–

1MHz Clock Rate, 10ms Write Time

(Current product, identified by process

identification letter F or M)

SO8 (MN)

150 mil width

–

2MHz Clock Rate, 5ms Write Time (New

Product, identified by process

identification letter W or G)

■

Sequential Read Operation

Enhanced ESD/Latch-Up Behavior

More than 1 Million Erase/Write Cycles

More than 40 Year Data Retention

TSSOP8 (DS)

3x3mm body size

TSSOP8 (DW)

169 mil width

April 2004

1/34

12 3 4 5 6 7...34

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