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M93C66-TMN7 PDF预览

M93C66-TMN7

更新时间: 2024-10-30 05:13:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
27页 385K
描述
IC,SERIAL EEPROM,256X16/512X8,CMOS,SOP,8PIN,PLASTIC

M93C66-TMN7 数据手册

 浏览型号M93C66-TMN7的Datasheet PDF文件第2页浏览型号M93C66-TMN7的Datasheet PDF文件第3页浏览型号M93C66-TMN7的Datasheet PDF文件第4页浏览型号M93C66-TMN7的Datasheet PDF文件第5页浏览型号M93C66-TMN7的Datasheet PDF文件第6页浏览型号M93C66-TMN7的Datasheet PDF文件第7页 
M93C86, M93C76, M93C66  
M93C56, M93C46, M93C06  
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide)  
MICROWIRE Serial Access EEPROM  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Single Supply Voltage:  
Figure 1. Packages  
– 4.5V to 5.5V for M93Cx6  
– 2.5V to 5.5V for M93Cx6-W  
– 1.8V to 5.5V for M93Cx6-R  
8
Dual Organization: by Word (x16) or Byte (x8)  
Programming Instructions that work on: Byte,  
1
Word or Entire Memory  
PDIP8 (BN)  
Self-timed Programming Cycle with Auto-Erase  
Ready/Busy Signal During Programming  
Speed:  
8
– 1MHz Clock Rate, 10ms Write Time (Current  
product, identified by process identification  
letter F or M)  
1
– 2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process identification  
letter W)  
SO8 (MN)  
150 mil width  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behaviour  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
M93C06 IS “NOT FOR NEW DESIGN”  
The M93C06 is still in production, but is not recom-  
mended for new designs. Please refer to AN1571  
on how to replace the M93C06 by the M93C46 in  
your application.  
March 2003  
1/27  

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