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M93C66-TWMN3TP/W PDF预览

M93C66-TWMN3TP/W

更新时间: 2024-10-29 18:10:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
27页 385K
描述
IC,SERIAL EEPROM,256X16/512X8,CMOS,SOP,8PIN,PLASTIC

M93C66-TWMN3TP/W 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
备用内存宽度:8数据保留时间-最小值:40
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
内存密度:4096 bit内存集成电路类型:EEPROM
内存宽度:16端子数量:8
字数:256 words字数代码:256
最高工作温度:125 °C最低工作温度:-40 °C
组织:256X16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:3/5 V
认证状态:Not Qualified串行总线类型:MICROWIRE
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.002 mA表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL写保护:SOFTWARE
Base Number Matches:1

M93C66-TWMN3TP/W 数据手册

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M93C86, M93C76, M93C66  
M93C56, M93C46, M93C06  
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide)  
MICROWIRE Serial Access EEPROM  
FEATURES SUMMARY  
Industry Standard MICROWIRE Bus  
Single Supply Voltage:  
Figure 1. Packages  
– 4.5V to 5.5V for M93Cx6  
– 2.5V to 5.5V for M93Cx6-W  
– 1.8V to 5.5V for M93Cx6-R  
8
Dual Organization: by Word (x16) or Byte (x8)  
Programming Instructions that work on: Byte,  
1
Word or Entire Memory  
PDIP8 (BN)  
Self-timed Programming Cycle with Auto-Erase  
Ready/Busy Signal During Programming  
Speed:  
8
– 1MHz Clock Rate, 10ms Write Time (Current  
product, identified by process identification  
letter F or M)  
1
– 2MHz Clock Rate, 5ms Write Time (New  
Product, identified by process identification  
letter W)  
SO8 (MN)  
150 mil width  
Sequential Read Operation  
Enhanced ESD/Latch-Up Behaviour  
More than 1 Million Erase/Write Cycles  
More than 40 Year Data Retention  
TSSOP8 (DS)  
3x3mm body size  
TSSOP8 (DW)  
169 mil width  
M93C06 IS “NOT FOR NEW DESIGN”  
The M93C06 is still in production, but is not recom-  
mended for new designs. Please refer to AN1571  
on how to replace the M93C06 by the M93C46 in  
your application.  
March 2003  
1/27  

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