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M68AW256MN70ZH1 PDF预览

M68AW256MN70ZH1

更新时间: 2024-11-25 02:53:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器
页数 文件大小 规格书
23页 157K
描述
4 Mbit (256K x16) 3.0V Asynchronous SRAM

M68AW256MN70ZH1 数据手册

 浏览型号M68AW256MN70ZH1的Datasheet PDF文件第2页浏览型号M68AW256MN70ZH1的Datasheet PDF文件第3页浏览型号M68AW256MN70ZH1的Datasheet PDF文件第4页浏览型号M68AW256MN70ZH1的Datasheet PDF文件第5页浏览型号M68AW256MN70ZH1的Datasheet PDF文件第6页浏览型号M68AW256MN70ZH1的Datasheet PDF文件第7页 
M68AW256M  
4 Mbit (256K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns,  
70ns  
Figure 1. Packges  
SINGLE BYTE READ/WRITE  
LOW STANDBY CURRENT  
LOW VCC DATA RETENTION: 1.5V  
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
TSOP44, and TFBGA48 PACKAGES  
44  
1
Compliant with Lead-Free Soldering Pro-  
cesses  
TSOP44 Type II (ND)  
Standard or Lead-Free Option  
FBGA  
TFBGA48 (ZH)  
6 x 8mm  
FBGA  
TFBGA48 (ZB)  
7 x 8mm  
April 2004  
1/23  
 
 

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