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M5M5V5636UG-16 PDF预览

M5M5V5636UG-16

更新时间: 2024-02-09 20:38:33
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器
页数 文件大小 规格书
25页 903K
描述
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM

M5M5V5636UG-16 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.87
最长访问时间:3.8 ns最大时钟频率 (fCLK):167 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
内存密度:18874368 bit内存集成电路类型:ZBT SRAM
内存宽度:36端子数量:165
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL电源:2.5/3.3 V
认证状态:Not Qualified最大待机电流:0.03 A
最小待机电流:2.38 V子类别:SRAMs
最大压摆率:0.38 mA表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOMBase Number Matches:1

M5M5V5636UG-16 数据手册

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Renesas LSIs  
M5M5V5636UG – 16  
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM  
PACKAGE  
DESCRIPTION  
165(11x15) bump BGA  
Body Size (13mm x 15mm)  
Bump Pitch 1.0mm  
The M5M5V5636UG is a family of 18M bit synchronous  
SRAMs organized as 524288-words by 36-bit. It is designed to  
eliminate dead bus cycles when turning the bus around between  
reads and writes, or writes and reads. Renesas's SRAMs are  
fabricated with high performance, low power CMOS technology,  
providing greater reliability. M5M5V5636UG operates on 3.3V  
power/ 2.5V I/O supply or a single 3.3V power supply and are  
3.3V CMOS compatible.  
APPLICATION  
High-end networking products that require high bandwidth, such  
as switches and routers.  
The M5M5V5636UG also operates on a single 2.5V power  
supply and is also 2.5V CMOS compatible. Therefore the  
M5M5V5636UG can replace the M5M5T5636UG.  
FUNCTION  
Synchronous circuitry allows for precise cycle control  
triggered by a positive edge clock transition.  
The M5M5V5636UG-16 operates at 167MHz or 133MHz and is  
guaranteed both AC DC electrical characteristics of 167MHz and  
those of 133MHz.  
Synchronous signals include : all Addresses, all Data Inputs,  
all Chip Enables (E1#, E2, E3#), Address Advance/Load (ADV),  
Clock Enable (CKE#), Byte Write Enables (BWa#, BWb#, BWc#,  
BWd#) and Read/Write (W#). Write operations are controlled by  
the four Byte Write Enables (BWa# - BWd#) and Read/Write(W#)  
inputs. All writes are conducted with on-chip synchronous  
self-timed write circuitry.  
Asynchronous inputs include Output Enable (G#), Clock (CLK)  
and Snooze Enable (ZZ). The HIGH input of ZZ pin puts the  
SRAM in the power-down state.The Linear Burst order (LBO#) is  
DC operated pin. LBO# pin will allow the choice of either an  
interleaved burst, or a linear burst.  
FEATURES  
• Fully registered inputs and outputs for pipelined operation  
• Fast clock speed: 167 and 133 MHz  
• Fast access time: 3.8 and 4.2 ns  
• Single 3.3V -5% and +5% power supply VDD  
• Separate VDDQ for 3.3V or 2.5V I/O  
• Single 2.5V -5% and +5% power supply VDD  
Individual byte write (BWa# - BWd#) controls may be tied  
LOW  
All read, write and deselect cycles are initiated by the ADV  
LOW input. Subsequent burst address can be internally  
generated as controlled by the ADV HIGH input.  
• Single Read/Write control pin (W#)  
• CKE# pin to enable clock and suspend operations  
• Internally self-timed, registers outputs eliminate the need  
to control G#  
• Snooze mode (ZZ) for power down  
• Linear or Interleaved Burst Modes  
• Three chip enables for simple depth expansion  
• JTAG boundary scan support  
PART NAME TABLE  
M5M5V5636UG-16  
Active Current  
(max.)  
Standby Current  
(max.)  
Operate frequency  
167MHz  
Access  
3.8ns  
4.2ns  
Cycle  
6.0ns  
7.5ns  
380mA  
350mA  
30mA  
30mA  
133MHz  
1/25  
M5M5V5636UG-16 REV.2.0  

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