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M5M5V208RV-12LL PDF预览

M5M5V208RV-12LL

更新时间： 2024-11-24 22:25:07
品牌 Logo 应用领域
三菱 - MITSUBISHI 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
7页 79K
描述
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

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中文翻译

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M5M5V208RV-12LL 技术参数

生命周期：Obsolete零件包装代码：TSOP
包装说明：SOP,针数：32
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.83
Is Samacsys：N最长访问时间：120 ns
JESD-30 代码：R-PDSO-G32内存密度：2097152 bit
内存集成电路类型：STANDARD SRAM内存宽度：8
功能数量：1端子数量：32
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：-20 °C组织：256KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：PARALLEL认证状态：Not Qualified
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

M5M5V208RV-12LL 数据手册

 浏览型号M5M5V208RV-12LL的Datasheet PDF文件第2页浏览型号M5M5V208RV-12LL的Datasheet PDF文件第3页浏览型号M5M5V208RV-12LL的Datasheet PDF文件第4页浏览型号M5M5V208RV-12LL的Datasheet PDF文件第5页浏览型号M5M5V208RV-12LL的Datasheet PDF文件第6页浏览型号M5M5V208RV-12LL的Datasheet PDF文件第7页 
MITSUBISHI LSIs  
'97.3.21  
M5M5V208FP,VP,RV,KV,KR -70L , -85L, -10L , -12L,  
-70LL, -85LL, -10LL, -12LL  
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM  
DESCRIPTION  
The M5M5V208 is 2,097,152-bit CMOS static RAM organized as  
262,144-words by 8-bit which is fabricated using high-performance  
quadruple-polysilicon and double metal CMOS technology. The use  
of thin film transistor(TFT) load cells and CMOS periphery results in a  
high density and low power static RAM. The M5M5V208 is designed  
for memory applications where high reliability, large storage, simple  
interfacing and battery back-up are important design objectives.  
The M5M5V208VP,RV,KV,KR are packaged in a 32-pin thin small  
outline package which is a high reliability and high density surface  
mount device(SMD).Two types of devices are available.  
PIN CONFIGURATION (TOP VIEW)  
1
2
3
32  
31  
30  
A17  
A16  
A14  
VCC(3V)  
A15  
S2  
4
5
6
29  
28  
27  
A12  
A7  
A6  
W
A13  
A8  
7
8
9
26  
25  
24  
A5  
A4  
A3  
A2  
A1  
A0  
A9  
A11  
OE  
A10  
S1  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
VP,KV(normal lead bend type package),RV,KR(reverse lead bend  
type package). Using both types of devices, it becomes very easy to  
design a printed circuit board.  
10  
11  
12  
23  
22  
21  
FEATURE  
13  
14  
15  
20  
19  
18  
DQ1  
DQ2  
DQ3  
(0V)GND  
Power supply current  
Active Stand-by  
Access  
time  
(max)  
Type  
16  
17  
(max)  
(max)  
70ns  
85ns  
M5M5V208FP,VP,RV,KV,KR-70L  
M5M5V208FP,VP,RV,KV,KR-85L  
M5M5V208FP,VP,RV,KV,KR-10L  
M5M5V208FP,VP,RV,KV,KR-12L  
M5M5V208FP,VP,RV,KV,KR-70LL  
M5M5V208FP,VP,RV,KV,KR-85LL  
Outline 32P2M-A(FP)  
60µA  
1
2
32 OE  
A11  
A9  
100ns  
120ns  
70ns  
(Vcc=3.6V)  
A10  
S1  
31  
30  
3
4
A8  
27mA  
(Vcc=3.6V)  
A13  
29 DQ8  
5
6
7
28  
DQ7  
W
27 DQ6  
S2  
85ns  
26  
A15  
Vcc  
DQ5  
10µ A  
(Vcc=3.6V)  
8
9
25  
DQ4  
100ns  
120ns  
M5M5V208FP,VP,RV,KV,KR-10LL  
M5M5V208FP,VP,RV,KV,KR-12LL  
M5M5V208VP,KV  
24  
23  
A17  
A16  
A14  
A12  
A7  
GND  
10  
11  
12  
13  
DQ3  
22  
21  
DQ2  
DQ1  
20  
19  
• Single 2.7 ~ 3.6V power supply  
A0  
14  
15  
A6  
A1  
• Operating temperature of 0 to +70°C  
• No clocks, No refresh  
• All inputs and outputs are TTL compatible.  
18  
17  
A5  
A2  
16  
A3  
A4  
Outline 32P3H-E(VP), 32P3K-B(KV)  
• Easy memory expansion and power down by S1 & S2  
• Data retention supply voltage=2.0V  
• Three-state outputs: OR-tie capability  
• OE prevents data contention in the I/O bus  
• Common Data I/O  
17 A3  
16  
15  
A4  
18  
A5  
A2  
19 A1  
14  
13  
A6  
20  
A7  
A0  
21  
12  
11  
A12  
A14  
A16  
A17  
Vcc  
A15  
S2  
DQ1  
22  
• Battery backup capability  
• Small stand-by current · · · · · · · · · · 0.3µA(typ.)  
DQ2  
10  
9
23  
DQ3  
24  
GND  
M5M5V208RV,KR  
25  
8
7
DQ4  
26  
DQ5  
PACKAGE  
27  
6
5
DQ6  
28  
M5M5V208FP  
: 32 pin 525 mil SOP  
W
DQ7  
29  
4
3
A13  
DQ8  
M5M5V208VP,RV : 32pin 8 X 20 mm2  
TSOP  
30  
A8  
S1  
M5M5V208KV,KR : 32pin 8 X 13.4 mm2 TSOP  
31  
2
1
A9  
A10  
32  
A11  
OE  
APPLICATION  
Outline 32P3H-F(RV), 32P3K-C(KR)  
Small capacity memory units  
Battery operating system  
Handheld communiation tools  
MITSUBISHI  
ELECTRIC  
1
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中文翻译

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