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M5M51008DRV-70H

更新时间： 2024-02-27 08:13:32
品牌 Logo 应用领域
三菱 - MITSUBISHI 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 63K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

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M5M51008DRV-70H 数据手册

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Ver. 1.1  
MITSUBISHI LSIs  
M5M51008DFP,VP,RV,KV,KR -55H, -70H  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS static  
RAM organized as 131072 word by 8-bit which are fabricated using  
high-performance quadruple-polysilicon and double metal CMOS  
technology. The use of thin film transistor (TFT) load cells and  
CMOS periphery result in a high density and low power static  
RAM.  
NC  
A16  
A14  
A12  
A7  
1
2
3
4
5
6
7
8
9
32  
31  
30  
29  
VCC  
ADDRESS  
A15 INPUT  
CHIP SELECT  
S2  
W
INPUT  
WRITE CONTROL  
INPUT  
They are low standby current and low operation current and ideal  
for the battery back-up application.  
28 A13  
27  
The M5M51008DVP,RV,KV are packaged in a 32-pin thin small  
outline package which is a high reliability and high density surface  
mount device(SMD). Two types of devices are available.  
M5M51008DVP(normal lead bend type package),  
A6  
A8  
ADDRESS  
INPUTS  
ADDRESS  
INPUTS  
A5  
26 A9  
A4  
25 A11  
24 OE  
23 A10  
M5M51008DRV(reverse lead bend type package).Using both types  
of devices, it becomes very easy to design a printed circuit board.  
OUTPUT ENABLE  
INPUT  
A3  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
A2 10  
A1  
11  
22  
S1  
A0 12  
DQ1 13  
21  
20  
DQ8  
DQ7  
DATA  
INPUTS/  
OUTPUTS  
DATA  
INPUTS/  
OUTPUTS  
DQ2  
14  
19 DQ6  
FEATURES  
DQ3 15  
GND16  
18  
DQ5  
Power supply current  
Access  
17  
DQ4  
Active  
(1MHz)  
(max)  
Type name  
time  
stand-by  
(max)  
(max)  
Outline 32P2M-A(FP)  
M5M51008DFP,VP,RV,KV-55H  
M5M51008DFP,VP,RV,KV-70H  
55ns  
70ns  
20µA  
15mA  
(1MHz)  
A11  
A9  
1
2
3
4
5
6
7
8
9
32  
31  
30  
OE  
A10  
S1  
(Vcc=5.5V)  
A8  
A13  
W
29 DQ8  
Directly TTL compatible : All inputs and outputs  
Easy memory expansion and power down by S1,S2  
Data hold on +2V power supply  
Three-state outputs : OR - tie capability  
OE prevents data contention in the I/O bus  
Common data I/O  
28  
DQ7  
27  
S2  
DQ6  
A15  
VCC  
NC  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
DQ5  
DQ4  
GND  
DQ3  
DQ2  
DQ1  
A0  
M5M51008DVP,KV  
Package  
A16 10  
M5M51008DFP  
···········3· 2pin 525mil S2OP  
A14  
11  
M5M51008DVP,RV ···········3· 2pin 8 X 20 mm TSOP  
2
M5M51008DKV  
···········3· 2pin 8 X 13.4 mm TSOP  
A12  
12  
A7  
13  
A6  
14  
A1  
15  
A5  
A2  
A4  
16  
A3  
APPLICATION  
Small capacity memory units  
Outline 32P3H-E(VP), 32P3K-B(KV)  
A4  
16  
17  
A3  
A5  
15  
18 A2  
A6  
14  
19 A1  
20 A0  
21 DQ1  
A7  
13  
A12  
12  
A14  
11  
22  
DQ2  
A16  
10  
23  
DQ3  
NC  
9
24  
GND  
M5M51008DRV  
VCC  
8
25  
DQ4  
A15  
S2  
7
6
5
4
3
2
1
26  
27  
28  
29  
30  
31  
32  
DQ5  
DQ6  
DQ7  
DQ8  
S1  
W
A13  
A8  
A9  
A10  
A11  
OE  
Outline 32P3H-F(RV)  
NC : NO CONNECTION  
MITSUBISHI  
ELECTRIC  
1
12345678

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与M5M51008DRV-70H相关器件

型号 品牌 获取价格 描述 数据表
M5M51008DRV-70H#BT RENESAS

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 		128KX8 STANDARD SRAM, 70ns, PDSO32, 8 X 20 MM, LEAD FREE, REVERSE, TSOP-32
M5M51008DRV-70HI RENESAS

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 		128KX8 STANDARD SRAM, 70ns, PDSO32, 8 X 20 MM, REVERSE, TSOP-32
M5M51008DRV-70HI#BT RENESAS

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 		128KX8 STANDARD SRAM, 70ns, PDSO32, 8 X 20 MM, LEAD FREE, REVERSE, TSOP-32
M5M51008DVP RENESAS

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 		1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DVP MITSUBISHI

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 		1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DVP-55H RENESAS

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 		1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DVP-55H MITSUBISHI

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 		1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
M5M51008DVP-55HI MITSUBISHI

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 		Standard SRAM, 128KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, TSOP-32
M5M51008DVP-55HI#BT RENESAS

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 		128KX8 STANDARD SRAM, 55ns, PDSO32, 8 X 20 MM, LEAD FREE,TSOP-32
M5M51008DVP-55HI#ST RENESAS

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 		128KX8 STANDARD SRAM, 55ns, PDSO32, 8 X 20 MM, TSOP-32

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