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M5M51008FP-10L PDF预览

M5M51008FP-10L

更新时间: 2024-11-27 22:24:39
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
7页 64K
描述
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

M5M51008FP-10L 数据手册

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1997-3/25  
MITSUBISHI LSIs  
M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,  
-55LL,-70LL,-10LL  
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS  
static RAM organized as 131072 word by 8-bit which are  
fabricated using high-performance triple polysilicon CMOS  
technology. The use of resistive load NMOS cells and CMOS  
periphery result in a high density and low power static RAM.  
They are low standby current and low operation current and ideal  
for the battery back-up application.  
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin  
small outline package which is a high reliability and high density  
surface mount device(SMD).Two types of devices are available.  
VP,KV(normal lead bend type package),RV,KR(reverse lead bend  
type package). Using both types of devices, it becomes very easy  
to design a printed circuit board.  
1
2
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
NC  
A16  
A14  
A12  
A7  
VCC  
A15  
S2  
ADDRESS  
INPUT  
CHIP SELECT  
INPUT  
WRITE CONTROL  
INPUT  
3
4
W
5
A13  
A8  
6
A6  
ADDRESS  
INPUTS  
ADDRESS  
INPUTS  
7
A5  
A9  
8
A4  
A11  
OE  
A10  
OUTPUT ENABLE  
INPUT  
9
A3  
ADDRESS  
10  
11  
12  
13  
A2  
INPUT  
CHIP SELECT  
INPUT  
A1  
S1  
A0  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
FEATURES  
DQ1  
Power supply current  
DATA  
INPUTS/  
OUTPUTS  
DATA  
INPUTS/  
OUTPUTS  
Access time  
(max)  
DQ2 14  
Active  
(1MHz)  
(max)  
Type name  
stand-by  
(max)  
15  
DQ3  
16  
GND  
M5M51008BP,FP,VP,RV,KV,KR-55L  
M5M51008BP,FP,VP,RV,KV,KR-70L  
M5M51008BP,FP,VP,RV,KV,KR-10L  
M5M51008BP,FP,VP,RV,KV,KR-55LL  
M5M51008BP,FP,VP,RV,KV,KR-70LL  
M5M51008BP,FP,VP,RV,KV,KR-10LL  
55ns  
70ns  
100µA  
15mA  
15mA  
Outline 32P4(P), 32P2M-A(FP)  
(Vcc=5.5V)  
100ns  
55ns  
20µA  
(Vcc=5.5V)  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A11  
OE  
A10  
S1  
70ns  
2
A9  
0.3µA  
(Vcc=3.0V,typ)  
100ns  
3
A8  
4
A13  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
GND  
DQ3  
DQ2  
DQ1  
A0  
Single +5V power supply  
Low stand-by current 0.3µA (typ.)  
5
W
6
S2  
Directly TTL compatible : All inputs and outputs  
Easy memory expansion and power down by S1,S2  
Data hold on +2V power supply  
Three-state outputs : OR - tie capability  
OE prevents data contention in the I/O bus  
Common data I/O  
7
A15  
8
VCC  
M5M51008BVP,KV  
9
NC  
10  
A16  
11  
A14  
12  
Package  
A12  
M5M51008BP  
M5M51008BFP  
M5M51008BVP,RV ···········3·2pin 8 X 20 mm2 TSOP  
M5M51008BKV,KR ···········3· 2pin 8 X 13.4 mm2 TSOP  
···········3· 2pin 600mil DIP  
···········3· 2pin 525mil SOP  
13  
A7  
14  
A6  
A1  
15  
A5  
A2  
16  
A4  
A3  
APPLICATION  
Small capacity memory units  
Outline 32P3H-E(VP), 32P3K-B(KV)  
A4  
A5  
A6  
A7  
17  
18  
19  
20  
21  
22  
23  
16  
15  
14  
13  
A3  
A2  
A1  
A0  
A12 12  
A14 11  
DQ1  
DQ2  
DQ3  
GND  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
S1  
A16  
NC  
VCC  
A15  
S2  
10  
9
24  
M5M51008BRV,KR  
8
25  
26  
27  
28  
29  
30  
31  
32  
7
6
5
W
4
A13  
A8  
3
2
A9  
A10  
OE  
1
A11  
Outline 32P3H-F(RV), 32P3K-C(KR)  
NC : NO CONNECTION  
1
MITSUBISHI  
ELECTRIC  

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