5秒后页面跳转
捷配首页

Datasheet > M5M4V4405CJ
M5M4V4405CJ PDF预览

M5M4V4405CJ

更新时间： 2024-11-28 22:16:55
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
27页 295K
描述
EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM

阅读下载

中文翻译

获取价格

M5M4V4405CJ 数据手册

 浏览型号M5M4V4405CJ的Datasheet PDF文件第2页浏览型号M5M4V4405CJ的Datasheet PDF文件第3页浏览型号M5M4V4405CJ的Datasheet PDF文件第4页浏览型号M5M4V4405CJ的Datasheet PDF文件第5页浏览型号M5M4V4405CJ的Datasheet PDF文件第6页浏览型号M5M4V4405CJ的Datasheet PDF文件第7页 
MITSUBISHI LSIs  
M5M4V4405CJ,TP-6,-7,-6S,-7S
EDO(HYPERPAGEMODE)4194304-BIT(1048576-WORDBY 4-BIT) DYNAMICRAM
DESCRIPTION  
This is family of 1048576-word by 4-bit dynamic RAMS,  
PIN CONFIGURATION (TOP VIEW)  
a
fabricated with the high performance CMOS process,and is ideal  
for large-capacity memory systems where high speed, low power  
dissipation , and low costs are essential.  
The use of quadruple-layer polysilicon process combined with  
silicide technology and a single-transistor dynamic storage stacked  
capacitor cell provide high circuit density at reduced costs.  
Multiplexed address inputs permit both a reduction in pins and an  
increase in system densities.  
DQ1  
DQ2  
W
1
2
3
4
5
26  
25  
VSS  
DQ4  
24  
23  
DQ3  
CAS  
RAS  
A9  
22 OE  
Self or extended refresh current is low enough for battery  
back-up application.  
FEATURES  
9
A8  
18  
A0  
A1  
Address  
access access access access  
time time time time  
RAS  
CAS  
OE  
Power  
dissipa-  
tion  
Cycle  
time  
10  
A7  
17  
16 A6  
15  
Type name  
A2 11  
(max.ns) (max.ns)(max.ns)(max.ns) (min.ns) (typ.mW)  
A3  
12  
13  
A5  
14 A4  
M5M4V4405CXX-6, -6S  
M5M4V4405CXX-7, -7S  
60  
70  
15  
20  
30  
35  
15  
20  
110  
130  
264  
231  
VCC  
XX=J, TP  
Outline 26P0J (300mil SOJ)  
Standard 26 pin SOJ, 26 pin TSOP(II)  
Single 3.3V±0.3V supply  
Low stand-by power dissipation  
CMOS lnput level .................................................1.8mW(Max)*  
CMOS lnput level ................................................180µW(Max)  
Low operating power dissipation  
M5M4V4405Cxx-6, -6S .....................................288.0mW (Max)  
M5M4V4405Cxx-7, -7S ....................................252.0mW (Max)  
Self refresh capabiility*  
DQ1  
DQ2  
W
1
2
3
4
5
26  
25  
VSS  
DQ4  
DQ3  
CAS  
OE  
24  
23  
RAS  
A9  
Self refresh current ..............................................100µA(max)  
Extended refresh capability*  
22  
Extended refresh current ....................................100µA(max)  
Hyper-page mode (1024-bit random access), Read-modify- write,  
RAS-only refresh CAS before RAS refresh, Hidden refresh, CBR  
self refresh(-6S,-7S) capabilities.  
Early-write mode and OE and W to control output buffer impedance  
1024 refresh cycles every 16.4ms (A0~A9)  
1024refresh cycle every128ms (A0~A9)*  
9
A8  
A7  
A6  
A5  
A0  
A1  
18  
17  
16  
15  
10  
A2 11  
*: Applicable to self refresh version (M5M4V4405Cxx-6S,-7S:  
option) only  
A3  
12  
13  
14 A4  
VCC  
Outline 26P3Z-E (300mil TSOP)  
APPLICATION  
Lap top personal computer,Solid state disc, Microcomputer  
memory, Refresh memory for CRT  
PIN DESCRIPTION  
Function  
Address inputs  
Pin name  
A0~A9  
DQ1~DQ4  
Data inputs / outputs  
Row address strobe input  
Column address strobe input  
Write control input  
RAS  
CAS  
W
OE  
VCC  
VSS  
Output enable input  
Power supply (+3.3V)  
Ground (0V)  
1
1234567...27

中文翻译

下载PDF

与M5M4V4405CJ相关器件

型号 品牌 获取价格 描述 数据表
M5M4V4405CJ-6 MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ-6S MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ-7 MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CJ-7S MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-6 MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-6S MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7 MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4405CTP-7S MITSUBISHI

获取价格

 		EDO (HYPER PAGE MODE) 4194304-BIT(1048576-WORD BY 4-BIT) DYNAMIC RAM
M5M4V4800CTP-7V MITSUBISHI

获取价格

 		Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28, 0.400 INCH, 1.27 MM PITCH, TSOP2-28
M5M4V4800J-6 MITSUBISHI

获取价格

 		Fast Page DRAM, 512KX8, 60ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28

与M5M4V4405CJ相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证