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M5M44260CJ-7 PDF预览

M5M44260CJ-7

更新时间： 2024-11-06 22:07:11
品牌 Logo 应用领域
三菱 - MITSUBISHI /
页数 文件大小 规格书
29页 285K
描述
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

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M5M44260CJ-7 数据手册

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MITSUBISHI LSIs  
M5M44260CJ,TP-5,-6,-7,  
-5S,-6S,-7S  
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM  
DESCRIPTION  
PIN CONFIGURATION (TOP VIEW)  
This is a family of 262144-word by 16-bit dynamic RAMs,  
fabricated with the high performance CMOS process, and is ideal  
for memory systems where high speed, low power dissipation, and  
low costs are essential.  
The use of double-layer metalization process technology and a  
single-transistor dynamic storage stacked capacitor cell provide  
high circuit density at reduced costs. Multiplexed address inputs  
permit both a reduction in pins and an increase in system  
densities. Self or extended refresh current is small enough for  
battery back-up application.  
VSS(0V)  
(5V)VCC  
DQ1  
40  
39  
38  
1
2
DQ16  
DQ15  
DQ2  
3
4
5
DQ3  
DQ4  
37 DQ14  
36  
DQ13  
(5V)VCC  
DQ5  
35 VSS(0V)  
34 DQ12  
6
7
This device has 2CAS and 1W terminals with a refresh cycle of  
512 cycles every 8.2ms.  
DQ6  
DQ11  
32 DQ10  
DQ9  
30 NC  
33  
8
DQ7  
9
FEATURES  
31  
DQ8  
10  
11  
Power  
dissipa-  
tion  
Address  
access  
OE  
RAS  
access access  
time time  
(max.ns) (max.ns)  
CAS  
Cycle  
time  
(min.ns)  
access  
NC  
Type name  
time  
time  
(max.ns)  
(typ.mW)  
(max.ns)  
NC  
29  
28  
LCAS  
UCAS  
OE  
12  
13  
14  
M5M44260CXX-5,-5S  
M5M44260CXX-6,-6S  
M5M44260CXX-7,-7S  
XX=J,TP  
50  
60  
70  
13  
15  
20  
25  
30  
35  
13  
15  
20  
90  
110  
130  
625  
550  
475  
W
RAS  
NC  
27  
26  
25  
24  
23  
22  
21  
15  
16  
A8  
A7  
A0  
Standard 40pin SOJ, 44 pin TSOP (II)  
Single 5V±10% supply  
Low stand-by power dissipation  
CMOS Input level  
CMOS Input level  
Operating power dissipation  
M5M44260Cxx-5,-5S  
M5M44260Cxx-6,-6S  
M5M44260Cxx-7,-7S  
Self refresh capability *  
Self refresh current  
Extended refresh capability  
Extended refresh current  
Fast-page mode (512-column random access), Read-modify-write,  
RAS-only refresh, CAS before RAS refresh, Hidden refresh  
capabilities.  
Early-write mode, LCAS / UCAS and OE to control output buffer  
impedance  
512 refresh cycles every 8.2ms (A0~A8)  
512 refresh cycles every 128ms (A0~A8) *  
Byte or word control for Read/Write operation (2CAS, 1W type)  
* : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S  
: option) only  
17  
18  
A6  
A1  
A2  
A5  
5.5mW (Max)  
550µW (Max) *  
19  
20  
A3  
A4  
VSS(0V)  
(5V)VCC  
688mW (Max)  
605mW (Max)  
523mW (Max)  
Outline 40P0K (400mil SOJ)  
150µA (Max)  
150µA (Max)  
(5V)VCC  
1
2
44 VSS(0V)  
43  
DQ1  
DQ2  
DQ16  
42  
3
4
DQ15  
41  
40  
39  
DQ14  
DQ13  
DQ3  
DQ4  
5
6
(5V)VCC  
DQ5  
VSS(0V)  
DQ12  
7
8
9
38  
DQ11  
DQ10  
DQ9  
DQ6  
37  
36  
DQ7  
DQ8 10  
35  
APPLICATION  
Microcomputer memory, Refresh memory for CRT  
NC  
13  
32  
31  
30  
NC  
14  
15  
16  
17  
18  
19  
20  
21  
22  
NC  
W
LCAS  
PIN DESCRIPTION  
UCAS  
OE  
Pin name  
A0~A8  
Function  
Address inputs  
29  
28  
RAS  
NC  
A0  
A8  
DQ1~DQ16  
RAS  
Data inputs / outputs  
27 A7  
Row address strobe input  
26  
25  
24  
23  
A6  
A1  
A2  
Lower byte control  
column address strobe input  
LCAS  
A5  
A4  
Upper byte control  
A3  
UCAS  
W
column address strobe input  
VSS(0V)  
(5V)VCC  
Write control input  
Output enable input  
Power supply (+5V)  
Ground (0V)  
OE  
Outline 44P3W-R (400mil TSOP Nomal Bend)  
VCC  
VSS  
NC: NO CONNECTION  
1
M5M44260CJ,TP-5,-5S : Under development  
1234567...29

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与M5M44260CJ-7相关器件

型号 品牌 获取价格 描述 数据表
M5M44260CJ-7S MITSUBISHI

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 		FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CJ-7T MITSUBISHI

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 		Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40
M5M44260CTP-5 MITSUBISHI

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 		FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CTP-5S MITSUBISHI

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 		FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CTP-5ST MITSUBISHI

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 		Fast Page DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/
M5M44260CTP-5T MITSUBISHI

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 		Fast Page DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/
M5M44260CTP-6 MITSUBISHI

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 		FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CTP-6S MITSUBISHI

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 		FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
M5M44260CTP-6ST MITSUBISHI

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 		Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/
M5M44260CTP-6T MITSUBISHI

获取价格

 		Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/

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