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M58WR128FT80ZB6E PDF预览

M58WR128FT80ZB6E

更新时间: 2024-09-25 18:29:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器
页数 文件大小 规格书
86页 1412K
描述
8MX16 FLASH 1.8V PROM, 80ns, PBGA56, 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56

M58WR128FT80ZB6E 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:BGA包装说明:7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
针数:56Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.41最长访问时间:80 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION POSSIBLE启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B56
JESD-609代码:e1长度:9 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:8, 255端子数量:56
字数:8388608 words字数代码:8000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA56,7X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:4K,32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:7.7 mm
Base Number Matches:1

M58WR128FT80ZB6E 数据手册

 浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第2页浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第3页浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第4页浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第5页浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第6页浏览型号M58WR128FT80ZB6E的Datasheet PDF文件第7页 
M58WR128FT  
M58WR128FB  
128 Mbit (8Mb x 16, Multiple Bank, Burst)  
1.8V Supply Flash Memory  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Package  
VDD = 1.7V to 2V for Program, Erase and  
Read  
VDDQ = 1.7V to 2.24V for I/O Buffers  
VPP = 12V for fast Program (optional)  
SYNCHRONOUS / ASYNCHRONOUS READ  
Synchronous Burst Read mode: 66MHz  
Asynchronous/ Synchronous Page Read  
mode  
FBGA  
Random Access: 60ns, 70ns, 80ns  
SYNCHRONOUS BURST READ SUSPEND  
PROGRAMMING TIME  
8µs by Word typical for Fast Factory  
Program  
Double/Quadruple Word Program option  
Enhanced Factory Program options  
VFBGA56 (ZB)  
7.7 x 9mm  
MEMORY BLOCKS  
Multiple Bank Memory Array: 4 Mbit  
Banks  
Parameter Blocks (Top or Bottom  
location)  
ELECTRONIC SIGNATURE  
Manufacturer Code: 20h  
Top Device Code, M58WR128FT: 881Eh  
Bottom Device Code, M58WR128FB:  
881Fh  
DUAL OPERATIONS  
Program Erase in one Bank while Read in  
others  
No delay between Read and Write  
operations  
PACKAGE  
Compliant with Lead-Free Soldering  
Processes  
BLOCK LOCKING  
All blocks locked at Power up  
Any combination of blocks can be locked  
WP for Block Lock-Down  
Lead-Free Versions  
SECURITY  
128 bit user programmable OTP cells  
64 bit unique device number  
COMMON FLASH INTERFACE (CFI)  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
October 2004  
1/86  

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