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M58LW128B150N1T PDF预览

M58LW128B150N1T

更新时间: 2024-11-12 22:30:55
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意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
65页 878K
描述
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories

M58LW128B150N1T 数据手册

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M58LW128A  
M58LW128B  
128 Mbit (8Mb x16 or 4Mb x32, Uniform Block, Burst)  
3V Supply Flash Memories  
PRELIMINARY DATA  
FEATURES SUMMARY  
WIDE DATA BUS for HIGH BANDWIDTH  
– M58LW128A: x16  
Figure 1. Packages  
– M58LW128B: x16/x32  
SUPPLY VOLTAGE  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
TSOP56 (N)  
14 x 20mm  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
– Pipelined Synchronous Burst Read  
– Asynchronous Random Read  
TBGA  
– Asynchronous Address Latch Controlled  
Read  
TBGA64 (ZA)  
10 x 13mm  
– Page Read  
ACCESS TIME  
– Synchronous Burst Read up to 66MHz  
– Asynchronous Page Mode Read 150/25ns  
– Random Read 150ns  
TBGA  
PROGRAMMING TIME  
TBGA80 (ZA)  
10 x 13mm  
– 16 Word or 8 Double-Word Write Buffer  
– 12µs Word effective programming time  
128 UNIFORM 64 KWord MEMORY BLOCKS  
BLOCK PROTECTION/ UNPROTECTION  
PROGRAM and ERASE SUSPEND  
OTP SECURITY AREA  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW128A: 8818h  
– Device Code M58LW128B: 8819h  
February 2003  
1/65  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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