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M58LW032C110ZA1E PDF预览

M58LW032C110ZA1E

更新时间: 2024-02-16 23:53:17
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存存储内存集成电路
页数 文件大小 规格书
61页 796K
描述
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory

M58LW032C110ZA1E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:10 X 13 MM, 1 MM PITCH, TBGA-64
针数:64Reach Compliance Code:not_compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.55最长访问时间:110 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B64JESD-609代码:e0
长度:13 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:32
端子数量:64字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:TBGA封装等效代码:BGA64,8X8,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE
页面大小:4 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2/3.3,3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:64K最大待机电流:0.00004 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NOR TYPE宽度:10 mm

M58LW032C110ZA1E 数据手册

 浏览型号M58LW032C110ZA1E的Datasheet PDF文件第2页浏览型号M58LW032C110ZA1E的Datasheet PDF文件第3页浏览型号M58LW032C110ZA1E的Datasheet PDF文件第4页浏览型号M58LW032C110ZA1E的Datasheet PDF文件第5页浏览型号M58LW032C110ZA1E的Datasheet PDF文件第6页浏览型号M58LW032C110ZA1E的Datasheet PDF文件第7页 
M58LW032C  
32 Mbit (2Mb x16, Uniform Block, Burst)  
3V Supply Flash Memory  
FEATURES SUMMARY  
WIDE x16 DATA BUS for HIGH BANDWIDTH  
SUPPLY VOLTAGE  
Figure 1. Packages  
– V = 2.7 to 3.6V core supply voltage for Pro-  
DD  
gram, Erase and Read operations  
– V  
= 1.8 to V for I/O Buffers  
DD  
DDQ  
SYNCHRONOUS/ASYNCHRONOUS READ  
– Synchronous Burst read  
TSOP56 (N)  
14 x 20 mm  
– Asynchronous Random Read  
– Asynchronous Address Latch Controlled  
Read  
– Page Read  
TBGA  
ACCESS TIME  
– Synchronous Burst Read up to 56MHz  
– Asynchronous Page Mode Read 90/25ns,  
110/25ns  
TBGA64 (ZA)  
10 x 13 mm  
– Random Read 90ns, 110ns  
PROGRAMMING TIME  
– 16 Word Write Buffer  
– 12µs Word effective programming time  
32 UNIFORM 64 KWord MEMORY BLOCKS  
ENHANCED SECURITY  
– Block Protection/ Unprotection  
– Smart Protection: irreversible block locking  
system  
– V  
signal for Program Erase Enable  
PEN  
– 128 bit Protection Register with 64 bit Unique  
Code in OTP area  
PROGRAM and ERASE SUSPEND  
COMMON FLASH INTERFACE  
100,000 PROGRAM/ERASE CYCLES per  
BLOCK  
ELECTRONIC SIGNATURE  
– Manufacturer Code: 0020h  
– Device Code M58LW032C : 8822h  
April 2003  
1/61  

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