M58LW032C110ZA6

更新时间： 2024-02-09 12:12:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
61页	796K
描述
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory

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M58LW032C110ZA6 数据手册

M58LW032C

32 Mbit (2Mb x16, Uniform Block, Burst)

3V Supply Flash Memory

FEATURES SUMMARY

■ WIDE x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

Figure 1. Packages

– V = 2.7 to 3.6V core supply voltage for Pro-

gram, Erase and Read operations

– V

= 1.8 to V for I/O Buffers

DDQ

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

TSOP56 (N)

14 x 20 mm

– Asynchronous Random Read

– Asynchronous Address Latch Controlled

Read

– Page Read

TBGA

■ ACCESS TIME

– Synchronous Burst Read up to 56MHz

– Asynchronous Page Mode Read 90/25ns,

110/25ns

TBGA64 (ZA)

10 x 13 mm

– Random Read 90ns, 110ns

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 12µs Word effective programming time

■ 32 UNIFORM 64 KWord MEMORY BLOCKS

■ ENHANCED SECURITY

– Block Protection/ Unprotection

– Smart Protection: irreversible block locking

system

– V

signal for Program Erase Enable

PEN

– 128 bit Protection Register with 64 bit Unique

Code in OTP area

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW032C : 8822h

April 2003

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