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M58BW032BB60T6T PDF预览

M58BW032BB60T6T

更新时间: 2024-11-22 22:46:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
60页 911K
描述
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory

M58BW032BB60T6T 数据手册

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M58BW032BT, M58BW032BB  
M58BW032DT, M58BW032DB  
32 Mbit (1Mb x32, Boot Block, Burst)  
3.3V Supply Flash Memory  
PRELIMINARY DATA  
FEATURES SUMMARY  
SUPPLY VOLTAGE  
Figure 1. Packages  
VDD = 3.0V to 3.6V for Program, Erase  
and Read  
VDDQ = VDDQIN = 1.6V to 3.6V for I/O  
Buffers  
HIGH PERFORMANCE  
Access Time: 45, 55 and 60ns  
75MHz Effective Zero Wait-State Burst  
Read  
PQFP80 (T)  
Synchronous Burst Reads  
Asynchronous Page Reads  
MEMORY ORGANIZATION  
– Eight 64 Kbit small parameter Blocks  
BGA  
– Four 128Kbit large parameter Blocks (of  
which one is OTP)  
– Sixty-two 512Kbit main Blocks  
LBGA80 (ZA)  
10 x 8 ball array  
HARDWARE BLOCK PROTECTION  
WP pin Lock Program and Erase  
VPEN signal for Program/Erase Enable  
SOFTWARE BLOCK PROTECTION  
ELECTRONIC SIGNATURE  
Tuning Protection to Lock Program and  
Erase with 64-bit User Programmable  
Password (M58BW032B version only)  
Manufacturer Code: 20h  
Top Device Code M58BW032xT: 8838h  
Bottom Device Code M58BW032xB:  
8837h  
SECURITY  
64-bit Unique Device Identifier (UID)  
OPERATING TEMPERATURE RANGE  
FAST PROGRAMMING  
Automotive (Grade 3): 40 to 125°C  
Industrial (Grade 6): 40 to 90°C  
Write to Buffer and Program capability  
OPTIMIZED FOR FDI DRIVERS  
Common Flash Interface (CFI)  
Fast Program/Erase Suspend feature in  
each block  
LOW POWER CONSUMPTION  
100µA Typical Standby  
November 2004  
1/60  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.  

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