M58BW032BT55T6T

更新时间： 2024-11-18 22:17:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		内存集成电路
页数	文件大小	规格书
60页	911K
描述
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory

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数据手册

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M58BW032BT55T6T 数据手册

M58BW032BT, M58BW032BB

M58BW032DT, M58BW032DB

32 Mbit (1Mb x32, Boot Block, Burst)

3.3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Packages

–

V_DD= 3.0V to 3.6V for Program, Erase

and Read

V_DDQ= V_DDQIN= 1.6V to 3.6V for I/O

Buffers

■

HIGH PERFORMANCE

–

Access Time: 45, 55 and 60ns

75MHz Effective Zero Wait-State Burst

Read

PQFP80 (T)

–

Synchronous Burst Reads

Asynchronous Page Reads

■

MEMORY ORGANIZATION

– Eight 64 Kbit small parameter Blocks

BGA

– Four 128Kbit large parameter Blocks (of

which one is OTP)

– Sixty-two 512Kbit main Blocks

LBGA80 (ZA)

10 x 8 ball array

■

HARDWARE BLOCK PROTECTION

–

WP pin Lock Program and Erase

V_PENsignal for Program/Erase Enable

SOFTWARE BLOCK PROTECTION

■

ELECTRONIC SIGNATURE

–

Tuning Protection to Lock Program and

Erase with 64-bit User Programmable

Password (M58BW032B version only)

–

Manufacturer Code: 20h

Top Device Code M58BW032xT: 8838h

Bottom Device Code M58BW032xB:

8837h

■

SECURITY

–

64-bit Unique Device Identifier (UID)

OPERATING TEMPERATURE RANGE

FAST PROGRAMMING

–

Automotive (Grade 3): –40 to 125°C

Industrial (Grade 6): –40 to 90°C

–

Write to Buffer and Program capability

OPTIMIZED FOR FDI DRIVERS

–

Common Flash Interface (CFI)

Fast Program/Erase Suspend feature in

each block

■

LOW POWER CONSUMPTION

100µA Typical Standby

–

November 2004

1/60

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...60

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与M58BW032BT55T6T相关器件

型号	品牌	获取价格	描述	数据表
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M58BW032BT55ZA3T	NUMONYX	获取价格	Flash, 1MX32, 55ns, PBGA80, 10 X 8 MM, 1 MM PITCH, LBGA-80
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M58BW032BT55ZA6T	NUMONYX	获取价格	Flash, 1MX32, 55ns, PBGA80, 10 X 8 MM, 1 MM PITCH, LBGA-80
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